论文信息 - Design of low power, wider tuning range CMOS voltage control oscillator for ultra wideband applications

Design of low power, wider tuning range CMOS voltage control oscillator for ultra wideband applications

This paper presents a diode varactor and MOS varactor voltage control oscillators using 0.25μm CMOS technology, proposed for Ultra Wideband application. The VCOs are designed for 3-5GHz UWB Impulse Radio, The VCO's has -107.6 dBc/Hz and -108.8 dBc/Hz phase noise at 1 MHz offset frequency. The diode varactor VCO has a tuning range of 300 MHz and the MOS varactor VCO has a wider tuning range of 610 MHz which is very difficult to achieve. Their power consumption at the maximum oscillation frequency is 2.26 mW from a 1.2 V voltage source, with -9 dBm output power which is very low compared to the conventional VCO in similar process design.

Forest Zhu | Michael Heimlich | Ayobami B Iji

[1] A. Fard. Analysis and Design of Low-Phase-Noise Integrated Voltage-Controlled Oscillators for Wide-Band RF Front-Ends , 2006 .

[2] E. Hegazi,et al. 23.4 A Filtering Technique to Lower Oscillator Phase Noise , 2008 .

[3] G.G. Shahidi,et al. Mainstreaming of SOI Technology , 1999, 29th European Solid-State Device Research Conference.

[4] C. Plett,et al. A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology , 2004, IEEE Journal of Solid-State Circuits.

[5] A. Nabavi. Ultra Wideband Oscillators , 2010 .

[6] A. Hajimiri,et al. Design issues in CMOS differential LC oscillators , 1999, IEEE J. Solid State Circuits.

[7] A. Hajimiri,et al. The Design of Low Noise Oscillators , 1999 .

[8] P. Andreani,et al. On the use of MOS varactors in RF VCOs , 2000, IEEE Journal of Solid-State Circuits.

[9] T. Melly,et al. Design of high-Q varactors for low-power wireless applications using a standard CMOS process , 2000, IEEE Journal of Solid-State Circuits.

[10] M. Tiebout,et al. MOS varactors with n- and p-type gates and their influence on an LC-VCO in digital CMOS , 2003, IEEE J. Solid State Circuits.

[11] C. McAndrew,et al. A physically based, scalable MOS varactor model and extraction methodology for RF applications , 2005, IEEE Transactions on Electron Devices.