Thin film growth, electrical transport and ohmic contact studies of p-ZnO

We have succeeded in growing a stable and ever eluding p-type (Li, Ni): ZnO using a codoping technique. Pulsed laser deposited (PLD) films grown in a small window of oxygen partial pressures (10⁻³–10⁻² mbar) showed room temperature carrier density ∼ 2.1 × 10⁻¹⁷ cm⁻³. Ohmic properties of Ni/Au contact on p-ZnO films were studied using LTLM method. Efforts have also been made to grow different nano forms of ZnO and study their optical properties for various device application prospects.