GAA(Gate-All-Around) 구조의 SONOS 플래시 메모리 리텐션 특성 분석

Simulating retention operation with device simulator(SILVACO™), we have investigated retention characteristic with width dependency with GAA (Gate-All-Around) SONOS structure. As the width is smaller, device shows good retention performance than the device which has large width and the planar conventional structure. Due to the Coulombic force between electrons in GAA trapping nitride layer, small width device shows better retention characteristic.