论文信息 - Nanoscale compositional fluctuations in multiple inGaAs/GaAs quantum wires

Nanoscale compositional fluctuations in multiple inGaAs/GaAs quantum wires

An accurate analysis of nanoscale compositional fluctuations in InGaAs/GaAs quantum wires grown by metalorganic chemical vapor deposition on V-grooved substrates was performed by means of high-spatial-resolution transmission electron microscopy techniques. Small In fluctuations (2%–3% excess indium), spatially localized over approximately 5 nm, were detected and related to changes in the photoluminescence and photoluminescence excitation spectra.

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