19.5 μW ultra-low-power 13.56 MHz RFID tag based on transparent zinc-oxide thin-film transistors
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Yan Han | Xiaoyu Ma | Leixiao Han | Zhi Ye | Yan Han | Zhi Ye | Xiaoyu Ma | Leixiao Han
[1] JianJang Huang,et al. Indium–gallium–zinc oxide thin film transistors with a hybrid-channel structure for defect suppression and mobility improvement , 2013 .
[2] Lei Lu,et al. Zinc-Oxide Thin-Film Transistor With Self-Aligned Source/Drain Regions Doped With Implanted Boron for Enhanced Thermal Stability , 2012, IEEE Transactions on Electron Devices.
[3] Byung-Do Yang,et al. A Transparent Logic Circuit for RFID Tag in a‐IGZO TFT Technology , 2013 .
[4] Ying Wang,et al. Low-Power Transparent RFID Circuits Using Enhancement/Depletion Logic Gates Based on Deuterium-Treated ZnO TFTs , 2017, IEEE Electron Device Letters.
[5] Shi-Jin Ding,et al. Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3 Thin-Film Transistors by Low-Temperature Annealing in Air , 2016, IEEE Transactions on Electron Devices.
[6] Gang Li,et al. The influence of channel layer thickness on the electrical properties of ZnO TFTs , 2014 .
[7] Dae-Shik Seo,et al. High-performance ZnO thin-film transistor fabricated by atomic layer deposition , 2011 .
[8] Zhi Ye,et al. Characteristics of Plasma-Fluorinated Zinc Oxide Thin-Film Transistors , 2012, IEEE Electron Device Letters.
[9] Man Wong,et al. High Precision Active-Matrix Self-Capacitive Touch Panel Based on Fluorinated ZnO Thin-Film Transistor , 2015, Journal of Display Technology.
[10] J. A. Luna-López,et al. Impact of active layer thickness in thin-film transistors based on Zinc Oxide by ultrasonic spray pyrolysis , 2015 .
[11] Sorin Cristoloveanu,et al. Mobility behavior and models for fully depleted nanocrystalline ZnO thin film transistors , 2013 .
[12] Tokiyoshi Matsuda,et al. Novel top‐gate zinc oxide thin‐film transistors (ZnO TFTs) for AMLCDs , 2007 .
[13] Christopher Pearson,et al. Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric , 2009, IET Circuits Devices Syst..
[14] Lei Zhou,et al. Manchester-encoded data transmission circuit integrated by metal-oxide TFTs suitable for 13.56 MHz radio-frequency identification tag application , 2018, IET Circuits Devices Syst..
[15] Ying Wang,et al. Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O2 Annealing , 2017, IEEE Transactions on Electron Devices.
[16] Manuel Quevedo-Lopez,et al. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance , 2016 .
[17] Peng Zhou,et al. Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2 , 2014, IEEE Electron Device Letters.
[18] JianJang Huang,et al. Demonstration of radio-frequency response of amorphous IGZO thin film transistors on the glass substrate , 2015 .
[19] Benjamin J. Norris,et al. ZnO-based transparent thin-film transistors , 2003 .
[20] H. Ozaki,et al. Oxide TFT Rectifier Achieving 13.56-MHz Wireless Operation , 2012, IEEE Transactions on Electron Devices.
[21] Israel Mejia,et al. Fully patterned and low temperature transparent ZnO-based inverters , 2013 .
[22] Kimoon Lee,et al. Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display Panel , 2009 .