The structure of clean and SiGe-covered Si(110) surfaces

[1]  Y. Yamamoto Study of a Si(110) surface by using reflection high-energy electron diffraction-total reflection angle X-ray spectroscopy and high temperature scanning tunneling microscopy , 1994 .

[2]  Tomoshige Sato,et al.  Study of the crystal growth of a (15,17,1) vicinal plane on a Si(110) surface using high‐temperature scanning tunneling microscopy , 1994 .

[3]  R. Butz,et al.  Germanium segregation induced reconstruction of SiGe layers deposited on Si(100) , 1992 .

[4]  R. Butz,et al.  2×n surface structure of SiGe layers deposited on Si(100) , 1992 .

[5]  B. Müller,et al.  Strained-layer growth and islanding of germanium on Si(111)-(7 × 7) studied with STM , 1991 .

[6]  H. Wagner,et al.  In situ STM characterisation of epitaxial layers in a 3-inch MBE system , 1990 .

[7]  J. Dieleman,et al.  Scanning tunneling microscopy study of Si (001) and Si (110) surface structures resulting from different thermal cleaning treatments , 1990 .

[8]  H. Wagner,et al.  Equipment of a 3-inch silicon molecular beam epitaxial system with scanning tunneling microscopy , 1989 .

[9]  R. Becker,et al.  Tunneling microscopy of silicon and germanium: Si(111)7×7, SnGe(111)7×7, GeSi(111)5×5, Si(111)9×9, Ge(111)2×8, Ge(100)2×1, Si(110)5×1 , 1988 .

[10]  T. Ide,et al.  Formation of superstructures in Ge-deposited surfaces of Si(110) by annealing , 1987 .

[11]  Yasuhiro Shiraki,et al.  Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .

[12]  B. Olshanetsky,et al.  Leed studies of vicinal surfaces of silicon , 1979 .

[13]  B. Olshanetsky,et al.  Phase transitions on clean Si(110) surfaces , 1977 .