An analytical charge-based compact delay model for submicrometer CMOS inverters

We develop an accurate analytical expression for the propagation delay of submicrometer CMOS inverters that takes into account the short-circuit current, the input-output coupling capacitance, and the carrier velocity saturation effects, of increasing importance in submicrometer CMOS technologies. The model is based on the nth-power-law MOSFET model and computes the delay from the charge delivered to the gate. Comparison with HSPICE level 50 simulations and other previously published models for a 0.18-/spl mu/m and a 0.35-/spl mu/m process technologies show significant improvements over previous models.

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