Atomically precise digital e-beam lithography

Hydrogen Depassivation Lithography (HDL) is a version of electron beam lithography that uses scanning tunneling microscope (STM) instrumentation to expose a self–developing resist that is a monolayer of H chemisorbed to a Si (100) 2x1 H-passivated surface. Developed in the 1990s it has been largely a laboratory tool used in research for nanofabrication. The technique is capable of atomic resolution, the ability to remove single H atoms from the Si surface and has much higher precision than the best conventional e-beam lithography can possibly achieve exposing polymeric resists. However, its most promising attribute is that it can be used as a digital fabrication tool and is the first of a class of nanofabrication techniques that can be considered digital atomic scale fabrication technologies. Digital Atomic Scale Fabrication can be shown to have similar advantages over analog fabrication techniques that digital information technology has over analog information technology.

[1]  J. Owen Atomically Precise Manufacturing for 2D-Designed Materials , 2022 .

[2]  J. Randall,et al.  Next generation of extreme-resolution electron beam lithography , 2019, Journal of Vacuum Science & Technology B.

[3]  M. Dreyer,et al.  STM-Induced Desorption and Lithographic Patterning of Cl-Si(100)-(2x1). , 2018, The journal of physical chemistry. A.

[4]  John N. Randall,et al.  Digital atomic scale fabrication an inverse Moore's Law – A path to atomically precise manufacturing , 2018, Micro and Nano Engineering.

[5]  S. Moheimani,et al.  Highly parallel scanning tunneling microscope based hydrogen depassivation lithography , 2018, Journal of Vacuum Science & Technology B.

[6]  Robert A. Wolkow,et al.  Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface. , 2017, ACS nano.

[7]  Lihua Zhang,et al.  Determining the resolution limits of electron-beam lithography: direct measurement of the point-spread function. , 2014, Nano letters.

[8]  W. R. Owen,et al.  Multimode hydrogen depassivation lithography: A method for optimizing atomically precise write times , 2013 .

[9]  Donald M. Tennant,et al.  Progress and issues in e-beam and other top down nanolithography , 2013 .

[10]  John N. Randall,et al.  Atomic precision patterning on Si: An opportunity for a digitized process , 2010 .

[11]  A S Dzurak,et al.  Scanning tunnelling microscope fabrication of arrays of phosphorus atom qubits for a silicon quantum computer , 2002 .

[12]  P D Nellist,et al.  Progress in aberration-corrected scanning transmission electron microscopy. , 2001, Journal of electron microscopy.

[13]  Karl Hess,et al.  Ultrahigh vacuum–scanning tunneling microscopy nanofabrication and hydrogen/deuterium desorption from silicon surfaces: implications for complementary metal oxide semiconductor technology , 1998 .

[14]  P. Avouris,et al.  Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100) , 1998 .

[15]  John R. Tucker,et al.  Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope , 1994 .

[16]  H. Ahmed,et al.  Very high voltage (500 kV) electron beam lithography for thick resists and high resolution , 1987 .