A Low cost micro-inertial and flow sensors based on the Direct Integration technology
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[1] L. Eyraud,et al. Piezoelectric bimorph bending sensor for shear-stress measurement in fluid flow , 1996 .
[2] N. C. MacDonald,et al. SCREAM I: A single mask, single-crystal silicon, reactive ion etching process for microelectromechanical structures , 1994 .
[3] A. Evans,et al. Micromachined silicon cantilever paddles with piezoresistive readout for flow sensing , 1996 .
[4] Direct integration of solid state stress sensors with single crystal microelectromechanical systems , 1998 .
[5] T. Fujita,et al. Analysis of a highly sensitive silicon gyroscope with cantilever beam as vibrating mass , 1996 .
[6] J. J. Wortman,et al. Effect of Mechanical Stress on p—n Junction Device Characteristics. II. Generation—Recombination Current , 1966 .
[7] Noel C. MacDonald,et al. Integrated micro‐scanning tunneling microscope , 1995 .
[8] A. Goetzberger,et al. Lowering the Breakdown Voltage of Silicon p‐n Junctions by Stress , 1964 .
[9] K. Najafi,et al. An all-silicon single-wafer fabrication technology for precision microaccelerometers , 1997, Proceedings of International Solid State Sensors and Actuators Conference (Transducers '97).
[10] J. Wortman,et al. Effect of Mechanical Stress on p‐n Junction Device Characteristics , 1964 .
[11] Jan H. J. Fluitman,et al. A fabrication process for electrostatic microactuators with integrated gear linkages , 1997 .
[12] J. Bergqvist,et al. A silicon condenser microphone using bond and etch-back technology , 1994 .