论文信息 - A hydrogen-sensitive Pd-gate MOS transistor

A hydrogen-sensitive Pd-gate MOS transistor

An n‐channel MOS transistor with palladium gate was fabricated. The threshold voltage of this transistor was found to depend on the partial pressure of hydrogen in the ambient atmosphere. At a device temperature of 150 °C, 10 ppm hydrogen in air is easily detected, and in nitrogen or argon the sensitivity is considerably larger. A model, based on hydrogen adsorption on the palladium–silicon dioxide interface, is proposed. This model explains the device behavior and is also able to predict the absolute sensitivity for hydrogen in argon.

C. Svensson | K. Lundström | M. S. Shivaraman | Christer Svensson | K. I. Lundström

[1] J. M. Thomas,et al. Introduction to the principles of heterogeneous catalysis , 1967 .

[2] Mino Green,et al. Solid State Surface Science , 1970 .

[3] Ingemar Lundström,et al. A hydrogen−sensitive MOS field−effect transistor , 1975 .

[4] F. A. Lewis,et al. The Palladium-Hydrogen System , 1967, Platinum Metals Review.

[5] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[6] G. Bond. Catalysis By Metals , 1962 .