RF monitoring test structures for advanced RF technologies working up to 100GHz with less than 80/spl mu/m width

A new RF test structure for monitoring of advanced silicon technologies and compatible with reduced scribe line dimensions (below 100 /spl mu/m width) is presented. All DC and RF obtained results are compared with extraction on classical structures and are in good agreement up to 100 GHz. This new layout approach can be extended to device RF matching parameters such as Ft mismatch monitoring.

[1]  D. Gloria,et al.  A new extraction method of high frequency noise parameters in the temperature range -55/150 deg. for SiGe HBT in BiCMOS process , 2000, ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).

[2]  G. Morin,et al.  Substrate resistance effect on the Fmax parameter of isolated BJT in BiCMOS process , 1999, ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307).

[3]  C.B. Sia,et al.  A novel RFCMOS process monitoring test structure , 2004, Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).

[4]  P. Chevalier,et al.  230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[5]  Torben Larsen,et al.  Ground-shielded measuring technique for accurate on-wafer characterization of RF CMOS devices , 2000, ICMTS 2000. Proceedings of the 2000 International Conference on Microelectronic Test Structures (Cat. No.00CH37095).

[6]  Kiat Seng Yeo,et al.  Novel RF Process Monitoring Test Structure for , 2005 .