1.3-μm InGaAs MQW Metamorphic Laser Diode Fabricated With Lattice Relaxation Control Based on In Situ Curvature Measurement

We demonstrate a lattice relaxation control by in situ curvature measurement for a metamorphic buffer. Using this relaxation control, we investigated a thin (240 nm) In<sub>0.15</sub>Ga<sub>0.85</sub> As metamorphic buffer for fabricating an unstrained In<sub>0.10</sub>Ga<sub>0.90</sub>As quasi-substrate on a GaAs substrate and succeeded in fabricating a 1.3-μm metamorphic InGaAs multiplequantum well laser diode (LD) on the metamorphic buffer. We confirmed that the LD was directly modulated at 25 Gb/s with a high-characteristic temperature (T<sub>0</sub> = 187 K).

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