Press-pack IGBTs, semiconductor switches for pulse power

A range of pressure contact IGBTs with voltage ratings of 1.8 kV and 5 kV are introduced as suitable switches for pulse power applications. The electromechanical characteristics of the pressure contact IGBTs are compared to substrate mounted devices and some significant differences, which may offer an advantage in some pulse power applications, are identified. Initial test results conducted on three devices of different ratings, under short pulse high di/dt conditions, are reported.

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