Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics
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A. Waag | M. Meneghini | B. Witzigmann | A. Bakin | F. Römer | H. Wasisto | H. Schumacher | Feng Yu | M. Fatahilah | Klaas Strempel | F. Hohls | D. Maradan