Investigation of PDA process to improve electrical characteristics of HfOxNy High-k dielectric formed by ECR plasma oxidation of HfN

In this paper, post deposition annealing (PDA) processes such as Si wafer covering rapid thermal annealing (SWC-RTA) and rapid cooling process were investigated to improve electrical characteristics of HfO<sub>x</sub>N<sub>y</sub> films formed by ECR Ar/O<sup>2</sup> plasma oxidation of ultra-thin HfN films. An EOT of 0.96 nm with leakage current density of 0.26 A/cm<sup>2</sup> was obtained by utilizing SWC-RTA and rapid cooling. The obtained result shows the smallest equivalent oxide thickness (EOT) for the HfO<sub>x</sub>N<sub>y</sub> film formed by ECR plasma process so far.

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