Optimized terminal current calculation for Monte Carlo device simulation
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Wolfgang Fichtner | Klaus Gärtner | Ulrich Krumbein | P. Douglas Yoder | W. Fichtner | K. Gärtner | P. Yoder | U. Krumbein
[1] M. S. Mock,et al. Analysis of mathematical models of semiconductors devices , 1983 .
[2] W. Shockley. Currents to Conductors Induced by a Moving Point Charge , 1938 .
[3] Young June Park,et al. An extended proof of the Ramo-Shockley theorem , 1991 .
[4] P. De Visschere,et al. The validity of Ramo's theorem , 1990 .
[5] B. S. Polsky,et al. Numerical simulation of transient processes in 2-D bipolar transistors , 1981 .
[6] F. Van de Wiele,et al. Current lines and accurate contact current evaluation in 2-D numerical simulation of semiconductor devices , 1985 .
[7] R. Dutton,et al. A new practical method to include recombination-generation process in self-consistent Monte Carlo device simulation , 1996, 1996 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD '96 (IEEE Cat. No.96TH8095).
[8] S. Ramo. Currents Induced by Electron Motion , 1939, Proceedings of the IRE.