Electrical Properties of a CuPc Field-Effect Transistor Using a UV/Ozone Treated and Untreated Substrate
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An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 μm 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.
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