A novel doping technology for ultra-shallow junction fabrication : boron diffusion from boron-adsorbed layer by rapid thermal annealing
暂无分享,去创建一个
Mitsumasa Koyanagi | Hiroyuki Kurino | Kazuhiro Hane | Takashi Matsuura | K. Park | M. Koyanagi | H. Kurino | K. Hane | Y. Song | T. Matsuura | Ki-Tae Park | Ki Seon Kim | Yun Heub Song | Ki-Seon Kim
[1] Ultra-shallow junction technology by atomic layer doping from arsenic adsorbed layer , 1999, 1999 57th Annual Device Research Conference Digest (Cat. No.99TH8393).
[2] Hamers,et al. Atomic structure and bonding of boron-induced reconstructions on Si(001). , 1995, Physical review letters.
[3] R. Hamers,et al. Boron-induced reconstructions of Si(001) investigated by scanning tunneling microscopy , 1995 .
[4] Y. Akasaka,et al. P-MOSFET's with ultra-shallow solid-phase-diffused drain structure produced by diffusion from BSG gate-sidewall , 1993 .
[5] Y. Kiyota,et al. Characteristics of Shallow Boron‐Doped Layers in Si by Rapid Vapor‐Phase Direct Doping , 1993 .
[6] J. Nishizawa,et al. Simple structured PMOSFET fabricated using molecular layer doping , 1990, IEEE Electron Device Letters.
[7] Ming L. Yu,et al. Doping reaction of PH3 and B2H6 with Si(100) , 1986 .
[8] Sorab K. Ghandhi,et al. VLSI fabrication principles , 1983 .