Self-aligned metal source/drain InP n-metal-oxide-semiconductor field-effect transistors using Ni–InP metallic alloy
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N. Taoka | M. Takenaka | S. Takagi | Sung-Hoon Lee | R. Nakane | M. Yokoyama | T. Yasuda | N. Fukuhara | M. Hata | Sanghyeon Kim | R. Iida | Y. Urabe | N. Miyata | H. Yamada