A Half-Select Disturb-Free 11T SRAM Cell With Built-In Write/Read-Assist Scheme for Ultralow-Voltage Operations

This paper presents a half-select disturb-free 11T static random access memory (SRAM) cell for ultralow-voltage operations. The proposed SRAM cell is well suited for bit-interleaving architecture, which helps to improve the soft-error immunity with error correction coding. The read static noise margin (RSNM) and the write margin (WM) are significantly improved due to its built-in write/read-assist scheme. The experimental results in a 40-nm standard CMOS technology indicate that at a 0.5-V supply voltage, RSNM of the proposed SRAM cell is <inline-formula> <tex-math notation="LaTeX">$19.8\times $ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$0.96\times $ </tex-math></inline-formula> as that of 6T and 8T SRAM cells with min-area, respectively. It achieves <inline-formula> <tex-math notation="LaTeX">$11.84\times $ </tex-math></inline-formula> and <inline-formula> <tex-math notation="LaTeX">$9.56\times $ </tex-math></inline-formula> higher WM correspondingly. As a result, a lower minimum operation voltage is obtained. In addition, its leakage power consumption is reduced by 53.3% and 44.5% when compared with 6T and 8T SRAM cell with min-area, respectively.

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