Modeling of substrate related extrinsic oxide failure distributions

The extrinsic oxide failure distributions of 6.8 nm thermal oxide on Czochralski (CZ) silicon wafers was investigated in detail. Using superposition of intrinsic Weibull distributions folded with a normal distribution of oxide thinning in COPs, enables one to describe the cumulative failure distributions of splits with different hydrogen pre-anneals. Voltage acceleration of individual Weibull distributions allows one to model experimental data of wafer level step stress and long term package level tests. The features of the linear E-model, 1/E-model and power law model are discussed in terms of thickness dependence of voltage acceleration. The results indicate that substrate related defects cause extrinsic oxide breakdown only at the late stage of device operation, even if the conservative linear E-model is assumed.

[1]  Alan Mathewson,et al.  Dielectric Reliability Measurement Methods: A Review , 1998 .

[2]  Guido Groeseneken,et al.  New insights in the relation between electron trap generation and the statistical properties of oxide breakdown , 1998 .

[3]  Guido Groeseneken,et al.  On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown , 1996, Proceedings of International Reliability Physics Symposium.

[4]  Jack C. Lee,et al.  Modeling and characterization of gate oxide reliability , 1988 .

[5]  Yuhki Satoh,et al.  Simulation of degradation of dielectric breakdown field of thermal SiO/sub 2/ films due to voids in Si wafers , 2000 .

[6]  Yoshio Murakami,et al.  Degradation of dielectric breakdown field of thermal SiO2 films due to structural defects in Czochralski silicon substrates , 1996 .

[7]  Marc Heyns,et al.  Observation of critical gate oxide thickness for substrate-defect related oxide failure , 1999 .

[8]  Yoshiaki Matsushita,et al.  Improvement of thin oxide quality by hydrogen annealed wafer , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[9]  R. Falster,et al.  Dielectric breakdown distributions for void containing silicon substrates , 2001, Microelectron. Reliab..

[10]  K. C. Boyko,et al.  Time dependent dielectric breakdown at 210 AA oxides , 1989, 27th Annual Proceedings., International Reliability Physics Symposium.

[11]  R.-P. Vollertsen,et al.  Bimodal lifetime distributions of dielectrics for integrated circuits , 1991 .

[12]  J. Stathis,et al.  Ultra-thin oxide reliability for ULSI applications , 2000 .

[13]  Ernest Y. Wu,et al.  Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[14]  Masato Tomita,et al.  The composition of octahedron structures that act as an origin of defects in thermal SiO2 on Czochralski silicon , 1995 .

[15]  R. Degraeve,et al.  Reliability: a possible showstopper for oxide thickness scaling? , 2000 .

[16]  Kenji Taniguchi,et al.  Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films , 1983, 21st International Reliability Physics Symposium.

[17]  K. C. Boyko,et al.  Time Dependent Dielectric Breakdown of 210? Oxides , 1989 .

[18]  Takashi Ochiai,et al.  Influence of Crystal-Originated “Particle” Microstructure on Silicon Wafers on Gate Oxide Integrity , 1997 .