Exploiting Synchronization Properties of Correlated Electron Devices in a Non-Boolean Computing Fabric for Template Matching

As complementary metal-oxide-semiconductor (CMOS) scaling continues to offer insurmountable challenges, questions about the performance capabilities of Boolean, digital machine based on Von-Neumann architecture, when operated within a power budget, have also surfaced. Research has started in earnest to identify alternative computing paradigms that provide orders of magnitude improvement in power-performance for specific tasks such as graph traversal, image recognition, template matching, and so on. Further, post-CMOS device technologies have emerged that realize computing elements which are neither CMOS replacements nor suited to work as a binary switch. In this paper, we present the realization of coupled and scalable relaxation-oscillators utilizing the metal-insulator-metal transition of vanadium-dioxide (VO2) thin films. We demonstrate the potential use of such a system in a non-Boolean computing paradigm and demonstrate pattern recognition, as one possible application using such a system.

[1]  F. J. Morin,et al.  Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature , 1959 .

[2]  Tadashi Shibata,et al.  Coupled-Oscillator Associative Memory Array Operation , 2013 .

[3]  Chia-Lun Hu.  Self-sustained oscillation in an R_H - C or R_H - L circuit containing a hysteresis resistor R_H , 1986 .

[4]  J C Grossman,et al.  Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams. , 2009, Nature nanotechnology.

[5]  T. Tiefel,et al.  Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films , 1994, Science.

[6]  Yan Fang,et al.  Non-Boolean associative architectures based on nano-oscillators , 2012, 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications.

[7]  Evgheni Strelcov,et al.  Gas sensor based on metal-insulator transition in VO2 nanowire thermistor. , 2009, Nano letters.

[8]  Suman Datta,et al.  Intrinsic electronic switching time in ultrathin epitaxial vanadium dioxide thin film , 2013 .

[9]  K. Müller,et al.  Possible highTc superconductivity in the Ba−La−Cu−O system , 1986 .

[10]  T. Saito.  On a coupled relaxation oscillator , 1988 .

[11]  Gyungock Kim,et al.  Mechanism and observation of Mott transition in VO2-based two- and three-terminal devices , 2004 .

[12]  R Stanley Williams,et al.  Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices , 2012, Nanotechnology.

[13]  Narayanan Vijaykrishnan,et al.  Video analytics using beyond CMOS devices , 2014, 2014 Design, Automation & Test in Europe Conference & Exhibition (DATE).

[14]  Eugene M. Izhikevich,et al.  Computing with Oscillators , 2000 .

[15]  S. Strogatz.  From Kuramoto to Crawford: exploring the onset of synchronization in populations of coupled oscillators , 2000 .

[16]  J. C. Kieffer,et al.  Evidence for a structurally-driven insulator-to-metal transition in VO 2 : A view from the ultrafast timescale , 2004, cond-mat/0403214.

[17]  Kaushik Roy,et al.  Dual pillar spin torque nano-oscillator , 2013 .

[18]  F. Corinto,et al.  An Associative Memory with oscillatory CNN arrays using spin torque oscillator cells and spin-wave interactions architecture and End-to-end Simulator , 2012, 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications.

[19]  Yann LeCun,et al.  The mnist database of handwritten digits , 2005 .

[20]  Byung-Gyu Chae,et al.  Mott Transition in VO2 Revealed by Infrared Spectroscopy and Nano-Imaging , 2007, Science.

[21]  Sun Jin Yun,et al.  Micrometer x-ray diffraction study of VO 2 films: Separation between metal-insulator transition and structural phase transition , 2008 .

[22]  E. Izhikevich,et al.  Oscillatory Neurocomputers with Dynamic Connectivity , 1999 .

[23]  W. Porod,et al.  Spin torque oscillator models for applications in associative memories , 2012, 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications.

[24]  Frank C. Hoppensteadt,et al.  Pattern recognition via synchronization in phase-locked loop neural networks , 2000, IEEE Trans. Neural Networks Learn. Syst..

[25]  T. Spila,et al.  Epitaxial growth of VO2 by periodic annealing , 2013, 1310.5021.

[26]  Hyun-Tak Kim,et al.  Observation of Mott Transition in VO_2 Based Transistors , 2003 .

[27]  W. Rippard,et al.  Developments in nano-oscillators based upon spin-transfer point-contact devices , 2008 .

[28]  J. Katine,et al.  Mutual phase-locking of microwave spin torque nano-oscillators , 2005, Nature.

[29]  Renyuan Zhang,et al.  CMOS supporting circuitries for nano-oscillator-based associative memories , 2012, 2012 13th International Workshop on Cellular Nanoscale Networks and their Applications.

[30]  H. Eisele.  State of the art and future of electronic sources at terahertz frequencies , 2010 .

[31]  T. M. Rice,et al.  Metal‐Insulator Transitions , 2003 .

[32]  M. Kawasaki,et al.  Collective bulk carrier delocalization driven by electrostatic surface charge accumulation , 2012, Nature.

[33]  William Paul,et al.  Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature , 1969 .