论文信息 - Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

The incorporation mechanisms of residual impurities in GaAs layers grown by molecular‐beam epitaxy has been investigated by high‐resolution photoluminescence (PL) spectroscopy at 2 K. A systematic study of near‐band‐edge emissions of undoped GaAs layers grown at a wide range of growth temperatures (Tg), 470–750 °C, demonstrates that PL spectra related with residual impurities are significantly dependent upon Tg. It was found that maximum emission intensity of free exciton is obtained at Tg ∼550 °C, and the minimum impurity incorporation is established at Tg of 550–650 °C.

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