A feedback-type BiCMOS logic gate
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The authors report on the development of a feedback-type BiCMOS logic gate using a 0.5- mu m BiCMOS technology. The propagation delay time of a three-input NAND gate with a 0.93-pF load is 245 and 290 ps at a supply voltage of 4.5 and 4 V, respectively. These values are about 1.4-1.2 times better than the 0.8- mu m BiCMOS gate operating at 5 V. A power dissipation of 0.4 mW was obtained with a 0.93-pF load, 4-V supply voltage, and 140-MHz operation. The power dissipation is comparable to that of a CMOS gate. >
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