Staggered Gain for 100+ GHz Broadband Amplifiers

A broadband amplifier is realized with cascaded stagger-tuned stages that are equalized for high bandwidth and low gain ripple. The staggered frequency response is demonstrated to improve the transimpedance limit of active circuits. The staggered response is demonstrated with a Darlington feedback amplifier and a constructive wave amplifier, which achieves low group delay. The broadband amplifier is implemented in a 0.12-μm SiGe BiCMOS process and achieves a 3-dB bandwidth of 102 GHz. The gain is 10 dB with 1.5-dB gain-ripple and group-delay variation under ±6 ps over the entire 3-dB bandwidth. The chip occupies an area of 0.29 mm2 including the pads and consumes 73 mW from a 2-V supply.

[1]  Joohwa Kim,et al.  Bandwidth Enhancement With Low Group-Delay Variation for a 40-Gb/s Transimpedance Amplifier , 2010, IEEE Transactions on Circuits and Systems I: Regular Papers.

[2]  Jun-De Jin,et al.  A Miniaturized 70-GHz Broadband Amplifier in 0.13-$\mu {\hbox{m}}$ CMOS Technology , 2008, IEEE Transactions on Microwave Theory and Techniques.

[3]  A. Hajimiri,et al.  Bandwidth enhancement for transimpedance amplifiers , 2004, IEEE Journal of Solid-State Circuits.

[4]  David A. Hodges Darlington's contributions to transistor circuit design , 1999 .

[5]  Jeffrey S. Walling,et al.  Wideband CMOS Amplifier Design: Time-Domain Considerations , 2008, IEEE Transactions on Circuits and Systems I: Regular Papers.

[6]  Joohwa Kim,et al.  A DC-102GHz broadband amplifier in 0.12µm SiGe BiCMOS , 2009, 2009 IEEE Radio Frequency Integrated Circuits Symposium.

[7]  A. Leven,et al.  SiGe differential transimpedance amplifier with 50 GHz bandwidth , 2002, 24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu.

[8]  Joohwa Kim,et al.  A 26dB-gain 100GHz Si/SiGe Cascaded Constructive-Wave Amplifier , 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[9]  Kevin W. Kobayashi,et al.  GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz , 1991 .

[10]  A.M. Niknejad,et al.  Design of a CMOS Tapered Cascaded Multistage Distributed Amplifier , 2009, IEEE Transactions on Microwave Theory and Techniques.

[11]  Y. Baeyens,et al.  SiGe broadband amplifiers with up to 80 GHz bandwidth for optical applications at 43 Gbit/s and beyond , 2003, 33rd European Microwave Conference Proceedings (IEEE Cat. No.03EX723C).

[12]  Jun-De Jin,et al.  A Miniaturized 70-GHz Broadband Amplifier in 0.13- m CMOS Technology , 2008 .

[13]  J.F. Buckwalter A 35-GHz differential distributed loss-compensation amplifier , 2008, 2008 IEEE Radio Frequency Integrated Circuits Symposium.

[14]  Stephen P. Boyd,et al.  Bandwidth extension in CMOS with optimized on-chip inductors , 2000, IEEE Journal of Solid-State Circuits.

[15]  Arpad L. Scholtz,et al.  An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology , 2006, IEEE Journal of Solid-State Circuits.

[16]  E. Sackinger The Transimpedance Limit , 2010 .

[17]  D.J. Allstot,et al.  Bandwidth Extension Techniques for CMOS Amplifiers , 2006, IEEE Journal of Solid-State Circuits.

[18]  M. Sato,et al.  A 90-GHz InP-HEMT lossy match amplifier with a 20-dB gain using a broadband matching technique , 2004, IEEE Compound Semiconductor Integrated Circuit Symposium, 2004..

[19]  Shen-Iuan Liu,et al.  40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90 nm CMOS , 2008, IEEE Journal of Solid-State Circuits.

[20]  Behnam Analui,et al.  A 40Gbs silicon photonics transceiver , 2007, SPIE OPTO.

[21]  Jun-De Jin,et al.  A 40-Gb/s Transimpedance Amplifier in 0.18-$\mu$m CMOS Technology , 2008, IEEE Journal of Solid-State Circuits.

[22]  Jiahui Yuan,et al.  Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques , 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

[23]  A. Leven,et al.  An InGaAs-InP HBT differential transimpedance amplifier with 47-GHz bandwidth , 2003, IEEE Journal of Solid-State Circuits.

[24]  Ren-Chieh Liu,et al.  DC-to-15- and DC-to-30-GHz CMOS distributed transimpedance amplifiers , 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

[25]  Joohwa Kim,et al.  Cascaded Constructive Wave Amplification , 2010, IEEE Transactions on Microwave Theory and Techniques.

[26]  W. Simburger,et al.  A 60 GHz broadband amplifier in SiGe bipolar technology , 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

[27]  A. Bachmann Noise figure of the darlington compound connection for transistors , 1958, IRE Transactions on Circuit Theory.

[28]  Jean-Olivier Plouchart,et al.  Amplifier in a 0.12µm SOI CMOS , 2004 .

[29]  To-Po Wang,et al.  An 80GHz travelling-wave amplifier in a 90nm CMOS technology , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..

[30]  Huei Wang,et al.  A 70GHz cascaded multi-stage distributed amplifier in 90nm CMOS technology , 2005, ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..