Recent advances in ultraviolet photodetectors

[1]  A. Rostami,et al.  High‐responsivity AlGaN–GaN multi‐quantum well UV photodetector , 2014 .

[2]  Y. Su,et al.  Quality Improvement of GaN on Si Substrate for Ultraviolet Photodetector Application , 2014, IEEE Journal of Quantum Electronics.

[3]  Rujia Zou,et al.  High-detectivity nanowire photodetectors governed by bulk photocurrent dynamics with thermally stable carbide contacts , 2013, Nanotechnology.

[4]  D. Shen,et al.  Vertical MgZnO Schottky ultraviolet photodetector with Al doped MgZnO transparent electrode , 2013 .

[5]  Md. Roslan Hashim,et al.  Growth of GaN films on silicon (1 1 1) by thermal vapor deposition method: Optical functions and MSM UV photodetector applications , 2013 .

[6]  M. Willander,et al.  Development of fast and sensitive ultraviolet photodetector using p‐type NiO/n‐type TiO2 heterostructures , 2013 .

[7]  Junying Zhang,et al.  Silver microgrid transparent conductive electrode based on bulk plasmon effect for ultraviolet wavelength application , 2013 .

[8]  Huanhuan Sun,et al.  Significantly enhanced photoresponse in carbon nanotube film/TiO2 nanotube array heterojunctions by pre-electroforming , 2013, Nanotechnology.

[9]  Manijeh Razeghi,et al.  AlxGa1-xN-based back-illuminated solar-blind photodetectors with external quantum efficiency of 89% , 2013 .

[10]  H. Aziz,et al.  Exciton-induced degradation of organic/electrode interfaces in ultraviolet organic photodetectors , 2013 .

[11]  Guangbo Che,et al.  High performance organic ultraviolet photodetectors based on novel phosphorescent Cu(I) complexes , 2013 .

[12]  T. Hsueh,et al.  Water- and humidity-enhanced UV detector by using p-type La-doped ZnO nanowires on flexible polyimide substrate. , 2013, ACS applied materials & interfaces.

[13]  M. Zhang,et al.  ${\rm NaTaO}_{3}$-Based Ultraviolet Photodetector With Capacitive Efficacy , 2013, IEEE Electron Device Letters.

[14]  G. He,et al.  Dependence of electrical field and photoresponse on multiplication region thickness for GaN APDs , 2013, 2013 13th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

[15]  Z. Mei,et al.  Realization of W-MgZnO epitaxial growth on BeO-buffered ZnO for UV-B photodetectors , 2013 .

[16]  M. Hashim,et al.  Analysis of the properties of germanium/zinc silicate film growth through a simple thermal evaporation technique for hydrogen gas sensing and deep UV photodetector application , 2013 .

[17]  J. Dai,et al.  Palladium nanoparticle enhanced giant photoresponse at LaAlO3/SrTiO3 two-dimensional electron gas heterostructures. , 2013, ACS nano.

[18]  Chao Xie,et al.  Monolayer graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors. , 2013, Small.

[19]  Chao Zhang,et al.  Low‐Cost Fully Transparent Ultraviolet Photodetectors Based on Electrospun ZnO‐SnO2 Heterojunction Nanofibers , 2013, Advanced materials.

[20]  Annealing Effects of Ti/Au Contact on n-MgZnO/p-Si Ultraviolet-B Photodetectors , 2013, IEEE Transactions on Electron Devices.

[21]  Yan Chen,et al.  Fabrication and UV‐sensing properties of one‐dimensional β‐Ga2O3 nanomaterials , 2013 .

[22]  Fang Yi,et al.  Self-powered ultraviolet photodetector based on a single ZnO tetrapod/PEDOT:PSS heterostructure , 2013 .

[23]  A. Wakahara,et al.  Demonstration of a large-area AlGaN/GaN Schottky barrier photodetector on Si with high detection limit , 2013 .

[24]  S. Chang,et al.  Recovery of thermal-degraded ZnO photodetector by embedding nano silver oxide nanoparticles , 2013 .

[25]  Liang Li,et al.  Flexible three-dimensional SnO2 nanowire arrays: atomic layer deposition-assisted synthesis, excellent photodetectors, and field emitters. , 2013, ACS applied materials & interfaces.

[26]  J. Lian,et al.  Ultraviolet Photodetector Fabricated From Multiwalled Carbon Nanotubes/Zinc-Oxide Nanowires/p-GaN Composite Structure , 2013, IEEE Electron Device Letters.

[27]  J. Lian,et al.  An ultraviolet photodetector fabricated from WO3 nanodiscs/reduced graphene oxide composite material , 2013, Nanotechnology.

[28]  S. Chang,et al.  Self-Powered ZnO Nanowire UV Photodetector Integrated With GaInP/GaAs/Ge Solar Cell , 2013, IEEE Electron Device Letters.

[29]  D. Shen,et al.  ZnO-based ultraviolet avalanche photodetectors , 2013 .

[30]  F. Liang,et al.  TiO2 Nanotube Array/Monolayer Graphene Film Schottky Junction Ultraviolet Light Photodetectors , 2013 .

[31]  H. Duan,et al.  High-performance photoelectrochemical-type self-powered UV photodetector using epitaxial TiO₂/SnO₂ branched heterojunction nanostructure. , 2013, Small.

[32]  K. X. Dong,et al.  Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes , 2013, IEEE Photonics Technology Letters.

[33]  Jung-Hee Lee,et al.  High UV-visible rejection ratio of dual-wavelength detecting MISIM UV sensor with a thin Al2O3 layer , 2013, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits.

[34]  B. Li,et al.  MgZnO avalanche photodetectors realized in Schottky structures , 2013 .

[35]  S. Dunn,et al.  Influence of anneal atmosphere on ZnO-nanorod photoluminescent and morphological properties with self-powered photodetector performance , 2013 .

[36]  Suppressing the atmosphere-induced performance instability of solution-grown zinc oxide-nanowire ultra-violet photodetector by hydrothermal treatment in water , 2013 .

[37]  Zhong Lin Wang,et al.  Piezo-phototronic effect enhanced visible/UV photodetector of a carbon-fiber/ZnO-CdS double-shell microwire. , 2013, ACS nano.

[38]  Dunjun Chen,et al.  High Quantum Efficiency GaN-Based p-i-n Ultraviolet Photodetectors Prepared on Patterned Sapphire Substrates , 2013, IEEE Photonics Technology Letters.

[39]  S. Chang,et al.  InGaN/GaN Multiquantum-Well Metal-Semiconductor-Metal Photodetectors With Beta-${\rm Ga}_{2}{\rm O}_{3}$ Cap Layers , 2013, IEEE Sensors Journal.

[40]  J. Jie,et al.  Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application , 2013, Nanotechnology.

[41]  M. Zhang,et al.  High response solar-blind ultraviolet photodetector based on Zr0.5Ti0.5O2 film , 2013 .

[42]  Shoou-Jinn Chang,et al.  ZnO Branched Nanowires and the p-CuO/n-ZnO Heterojunction Nanostructured Photodetector , 2013, IEEE Transactions on Nanotechnology.

[43]  M. Zhang,et al.  Ultraviolet Detector Based on $\hbox{SrZr}_{0.1} \hbox{Ti}_{0.9}\hbox{O}_{3}$ Film , 2013, IEEE Electron Device Letters.

[44]  H. Z. Chen,et al.  Thickness effect of sputtered ZnO seed layer on the electrical properties of Li-doped ZnO nanorods and application on the UV photodetector , 2013, 2013 IEEE 5th International Nanoelectronics Conference (INEC).

[45]  Yongsheng Wang,et al.  Structural spectral response tuning in organic deep ultraviolet photodetectors , 2013 .

[46]  Ching-Ting Lee,et al.  High Detectivity Mechanism of ZnO-Based Nanorod Ultraviolet Photodetectors , 2013, IEEE Photonics Technology Letters.

[47]  Dunjun Chen,et al.  High Deep-Ultraviolet Quantum Efficiency GaN P?I?N Photodetectors with Thin P-GaN Contact Layer , 2013 .

[48]  L. Shi,et al.  Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application , 2012, IECON 2012 - 38th Annual Conference on IEEE Industrial Electronics Society.

[49]  Qingfeng Dong,et al.  A nanocomposite ultraviolet photodetector based on interfacial trap-controlled charge injection. , 2012, Nature nanotechnology.

[50]  Y. Yokota,et al.  Filterless vacuum ultraviolet photoconductive detector fabricated on NdF3 thin film , 2012, IEEE Photonics Conference 2012.

[51]  Bin Chen,et al.  Analysis of temperature-dependent characteristics of a 4H-SiC metal-semiconductor-metal ultraviolet photodetector , 2012 .

[52]  Dali Shao,et al.  Near ultraviolet photodetector fabricated from polyvinyl-alcohol coated In2O3 nanoparticles , 2012 .

[53]  W. Wang,et al.  Ultraviolet Photodetectors With Narrow-Band Spectral Response Using TAPC Donor , 2012, IEEE Transactions on Electron Devices.

[54]  M. V. Petrenko,et al.  Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range , 2012 .

[55]  Dongbo Wang,et al.  Al 0.40 in 0.02 Ga 0.58 N based metal-semiconductor-metal photodiodes for ultraviolet detection , 2012, 2012 International Conference on Optoelectronics and Microelectronics.

[56]  Dunjun Chen,et al.  Bias-Selective Dual-Operation-Mode Ultraviolet Schottky-Barrier Photodetectors Fabricated on High-Resistivity Homoepitaxial GaN , 2012, IEEE Photonics Technology Letters.

[57]  N. Horiuchi.  Cerium fluoride UV detector , 2012, Nature Photonics.

[58]  Masashi Otsuki,et al.  New ultraviolet avalanche photodiodes (APDs) of organic (PEDOT: PSS)–inorganic (ZnSSe) hybrid structure , 2012 .

[59]  L. E. Rodak,et al.  Aluminum gallium nitride/silicon carbide separate absorption and multiplication avalanche photodiodes , 2012, 2012 Lester Eastman Conference on High Performance Devices (LEC).

[60]  Fang Yang,et al.  High-Performance Ultraviolet Photodetector Based on Polycrystalline ${\rm SrTiO}_{3}$ Thin Film , 2012, IEEE Sensors Journal.

[61]  Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light , 2012 .

[62]  Gorkem Memisoglu,et al.  Highly Efficient Organic UV Photodetectors Based on Polyfluorene and Naphthalenediimide Blends: Effect of Thermal Annealing , 2012 .

[63]  Xingao Gong,et al.  An Optimized Ultraviolet‐A Light Photodetector with Wide‐Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt , 2012, Advanced materials.

[64]  T. Tseng,et al.  ZnO nanorods grown on polymer substrates as UV photodetectors , 2012 .

[65]  M. Lee,et al.  Solar-Blind p-i-n Photodetectors Formed on ${\rm SiO}_{2}$-Patterned n-GaN Templates , 2012, IEEE Journal of Quantum Electronics.

[66]  A device with two kinds of functions —Ultraviolet photodetector and electroluminescence: Fabrication and carrier transport mechanism , 2012 .

[67]  Eva Monroy,et al.  Responsivity and photocurrent dynamics in single GaN nanowires , 2012 .

[68]  Xuan Zhao,et al.  p-n Heterojunction on ordered ZnO nanowires/polyaniline microrods double array. , 2012, Langmuir : the ACS journal of surfaces and colloids.

[69]  G. Conte,et al.  Diamond Detectors for UV and X-Ray Source Imaging , 2012, IEEE Electron Device Letters.

[70]  Ji Yu,et al.  Enhanced Responsivity of Photodetectors Realized via Impact Ionization , 2012, Sensors.

[71]  D. Neculoiu,et al.  Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies , 2012 .

[72]  High response organic ultraviolet photodetectors based on 4,7-diphenyl-1,10-phenanthroline , 2012 .

[73]  Min-Hsiung Hon,et al.  Improving the Performance of a Zinc Oxide Nanowire Ultraviolet Photodetector by Adding Silver Nanoparticles , 2012 .

[74]  D. Shen,et al.  Ultraviolet photodetectors fabricated from ZnO p-i-n homojunction structures , 2011 .

[75]  S. Young,et al.  MgZnO Nanorod Homojunction Photodetectors for Solar-Blind Detection , 2011 .

[76]  S. Shinde,et al.  High-performance UV detector based on Ga-doped zinc oxide thin films , 2011 .

[77]  Min-Hsiung Hon,et al.  Fabrication of transparent p-NiO/ n-ZnO heterojunction devices for ultraviolet photodetectors , 2011 .

[78]  Two-dimensional numerical computation of the structure-dependent spectral response in a 4H-SiC metal?semiconductor?metal ultraviolet photodetector with consideration of reflection and absorption on contact electrodes , 2011 .

[79]  Hui Song,et al.  A crossbar-type high sensitivity ultraviolet photodetector array based on a one hole–one nanorod configuration via nanoimprint lithography , 2011, Nanotechnology.

[80]  Y. Xiaodong,et al.  Fabrication of ZnO nanowall-network ultraviolet photodetector on Si substrates , 2011 .

[81]  Dunjun Chen,et al.  GaN MSM photodetectors fabricated on bulk GaN with low dark‐current and high UV/visible rejection ratio , 2011 .

[82]  S. Chang,et al.  Electrical and Optical Characteristics of UV Photodetector With Interlaced ZnO Nanowires , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[83]  Xiaomin Li,et al.  Effects of post-annealing on Schottky contacts of Pt/ZnO films toward UV photodetector , 2011 .

[84]  Hongzheng Chen,et al.  Low-Temperature Solution Processed Utraviolet Photodetector Based on an Ordered TiO2 Nanorod Array–Polymer Hybrid , 2011 .

[85]  Yang Yintang,et al.  Quantitatively Exploring the Effect of a Triangular Electrode on Performance Enhancement in a 4H-SiC Metal-Semiconductor-Metal Ultraviolet Photodetector , 2011 .

[86]  M. Kneissl,et al.  High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching , 2011 .

[87]  D. Shen,et al.  Ultraviolet photodetectors with MgZnO nanowall networks grown by molecular beam epitaxy on Si(111) substrates , 2011 .

[88]  Xingzhong Zhao,et al.  Effects of thermal annealing on the performance of Al/ZnO nanorods/Pt structure ultraviolet photodetector , 2011 .

[89]  Jian Sun,et al.  Ultraviolet photodetector with bandpass characteristic based on a blend of PVK and PBD , 2011 .

[90]  Hongzheng Chen,et al.  Solution-processed organic UV photodetectors based on polyfluorene and naphthalene diimide , 2011 .

[91]  J. F. Felix,et al.  Fabrication and electrical characterization of polyaniline/silicon carbide heterojunctions , 2011 .

[92]  Maki Suemitsu,et al.  Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes , 2011 .

[93]  L. Pomortseva.  Minority-charge-carrier mobility at low injection level in semiconductors , 2011 .

[94]  R. Mertens,et al.  Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes , 2011 .

[95]  Dunjun Chen,et al.  Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate , 2011 .

[96]  V. Kotov,et al.  AlN/AlGaN heterostructures for selective ultraviolet MSM detectors , 2011 .

[97]  Yannan Xie,et al.  Low-Dark-Current $\hbox{TiO}_{2}$ MSM UV Photodetectors With Pt Schottky Contacts , 2011, IEEE Electron Device Letters.

[98]  S. Fujita,et al.  Fabrication of PEDOT:PSS/ZnMgO Schottky‐type ultraviolet sensors on glass substrates with solution‐based mist deposition technique and hard‐mask patterning , 2011 .

[99]  Yannan Xie,et al.  Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived TiO2 films , 2011 .

[100]  A. Alec Talin,et al.  A Perspective on Nanowire Photodetectors: Current Status, Future Challenges, and Opportunities , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[101]  Xiaojuan Sun,et al.  Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors , 2011 .

[102]  Ultraviolet photodetector fabricated from metal-organic chemical vapor deposited MgZnO , 2011 .

[103]  S. Chang,et al.  Thermally stable Ir/n-ZnO Schottky diodes , 2011 .

[104]  Jian Sun,et al.  The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response , 2011 .

[105]  Hongzheng Chen,et al.  Spectral response tuning and realization of quasi-solar-blind detection in organic ultraviolet photodetectors , 2011 .

[106]  P. Dutta,et al.  Enhanced ultraviolet sensitivity of zinc oxide nanoparticle photoconductors by surface passivation , 2011 .

[107]  Y. Wu,et al.  Ultraviolet light sensitive In‐doped ZnO thin film field effect transistor printed by inkjet technique , 2011 .

[108]  Chunlei Yang,et al.  High responsivity ultraviolet photodetector realized via a carrier-trapping process , 2010 .

[109]  Yue Zhang,et al.  Self-powered ultraviolet photodetector based on a single Sb-doped ZnO nanobelt , 2010 .

[110]  Tianyou Zhai,et al.  Ultrahigh‐Performance Solar‐Blind Photodetectors Based on Individual Single‐crystalline In2Ge2O7 Nanobelts , 2010, Advanced materials.

[111]  Y. M. Zhao,et al.  Contact Properties of Au/Mg0.27Zn0.73O by Different Annealing Processes , 2010 .

[112]  Jian Sun,et al.  Fast response ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by radio-frequency magnetron sputtering , 2010 .

[113]  Fong Kwong Yam,et al.  Characteristics of ZnO MSM UV photodetector with Ni contact electrodes on poly propylene carbonate (PPC) plastic substrate , 2010 .

[114]  Highly efficient organic ultraviolet photodetectors based on a Cu(I) complex , 2010 .

[115]  M. Aono,et al.  Giant Improvement of the Performance of ZnO Nanowire Photodetectors by Au Nanoparticles , 2010 .

[116]  J. Mares,et al.  Deep-ultraviolet photodetectors from epitaxially grown NixMg1−xO , 2010 .

[117]  X. Y. Li,et al.  Photoresponse simulation of visible blind GaN/AlGaN p-i-n photodiode , 2010, Numerical Simulation of Optoelectronic Devices.

[118]  Zhong Lin Wang,et al.  Enhancing sensitivity of a single ZnO micro-/nanowire photodetector by piezo-phototronic effect. , 2010, ACS nano.

[119]  C. Shan,et al.  MgZnO/ZnO p–n junction UV photodetector fabricated on sapphire substrate by plasma-assisted molecular beam epitaxy , 2010 .

[120]  D. Shen,et al.  Improved ultraviolet/visible rejection ratio using MgZnO/SiO2/n-Si heterojunction photodetectors , 2010 .

[121]  Hongzheng Chen,et al.  Synthesis of solution processable ultraviolet sensitive organic molecules and their application in hybrid UV photodetector , 2010 .

[122]  Hongzheng Chen,et al.  High efficient UV-A photodetectors based on monodispersed ligand-capped TiO2 nanocrystals and polyfluorene hybrids , 2010 .

[123]  Chun‐Sing Lee,et al.  Visible-blind ultraviolet sensitive photodiode with high responsivity and long term stability , 2010 .

[124]  D. Shen,et al.  Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer , 2010 .

[125]  F. Julien,et al.  Ultraviolet photodetector based on GaN/AlN quantum disks in a single nanowire. , 2010, Nano letters.

[126]  Dongxu Zhao,et al.  High spectrum selectivity organic/inorganic hybrid visible-blind ultraviolet photodetector based on ZnO nanorods , 2010 .

[127]  Tae Whan Kim,et al.  Enhancement of the photocurrent in ultraviolet photodetectors fabricated utilizing hybrid polymer-ZnO quantum dot nanocomposites due to an embedded graphene layer , 2010 .

[128]  Y. Irokawa,et al.  Electrical characterization of n -GaN epilayers using transparent polyaniline Schottky contacts , 2010 .

[129]  N. Marzari,et al.  Ultraviolet Photodetectors Based on Anodic TiO2 Nanotube Arrays , 2010 .

[130]  GaN/AlN quantum disc single‐nanowire photodetectors , 2010 .

[131]  X. Zhang,et al.  High-response ultraviolet photodetector based on N,N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)benzidine and 2-(4-tertbutylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole. , 2010, Optics express.

[132]  Y. Su,et al.  AlInGaN ultraviolet-C photodetectors with a Ni/Ir/Au multilayer metal contact , 2010 .

[133]  D. Shen,et al.  Metal−Oxide−Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain , 2010 .

[134]  Horst Hahn,et al.  Ultraviolet photodetector arrays assembled by dielectrophoresis of ZnO nanoparticles , 2010, Nanotechnology.

[135]  Chien-Chun Chen,et al.  AlGaN-based ultraviolet photodetector with micropillar structures , 2010 .

[136]  Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector , 2010 .

[137]  H. Yadav,et al.  Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation , 2010 .

[138]  M. Giardini,et al.  A hybrid organic semiconductor/silicon photodiode for efficient ultraviolet photodetection. , 2010, Optics express.

[139]  Y. Bando,et al.  An Efficient Way to Assemble ZnS Nanobelts as Ultraviolet‐Light Sensors with Enhanced Photocurrent and Stability , 2010 .

[140]  Wei Wang,et al.  Metal–insulator–semiconductor–insulator–metal structured titanium dioxide ultraviolet photodetector , 2010 .

[141]  Chaoyi Yan,et al.  Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time , 2010 .

[142]  J. C. Li,et al.  High performance Schottky UV photodetectors based on epitaxial AlGaN thin film , 2010 .

[143]  Wenjun Zhang,et al.  ZnO nanowires array p-n homojunction and its application as a visible-blind ultraviolet photodetector , 2010 .

[144]  Lis K. Nanver,et al.  Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range , 2010 .

[145]  Yitai Qian,et al.  High‐Performance Blue/Ultraviolet‐Light‐Sensitive ZnSe‐Nanobelt Photodetectors , 2009, Advanced materials.

[146]  Wenlian Li,et al.  Double wavelength ultraviolet light sensitive organic photodetector , 2009 .

[147]  Hongzheng Chen,et al.  Hybrid ultraviolet photodetectors with high photosensitivity based on TiO2 nanorods array and polyfluorene , 2009 .

[148]  J. Y. Zhang,et al.  MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response , 2009 .

[149]  Chuanwei Cheng,et al.  Fabrication of ZnO nanorod array-based photodetector with high sensitivity to ultraviolet , 2009 .

[150]  S. Chang,et al.  Laterally-grown ZnO-nanowire photodetectors on glass substrate , 2009 .

[151]  D. Shen,et al.  Ultraviolet photodetector based on a MgZnO film grown by radio-frequency magnetron sputtering. , 2009, ACS applied materials & interfaces.

[152]  Byung-Moo Moon,et al.  Ultraviolet photodetectors based on ZnO nanoparticles , 2009 .

[153]  H. F. Lui,et al.  Fabrication and characterization of Ni/GaN Schottky junction erythemal UV detectors , 2009, 2009 14th OptoElectronics and Communications Conference.

[154]  S. Chang,et al.  Novel fabrication of UV photodetector based on ZnO nanowire/p-GaN heterojunction , 2009 .

[155]  S. Chang,et al.  Improved performance of GaN-based Schottky barrier photodetectors by annealing Ir/Pt Schottky contact in O2 , 2009 .

[156]  J. Wu,et al.  Ultraviolet photodetectors made from SnO2 nanowires , 2009 .

[157]  Takashi Sekiguchi,et al.  Single‐Crystalline ZnS Nanobelts as Ultraviolet‐Light Sensors , 2009 .

[158]  Y. Su,et al.  Ultraviolet photodetectors based on selectively grown ZnO nanorod arrays , 2009 .

[159]  D. Shen,et al.  MgNiO-based metal–semiconductor– metal ultraviolet photodetector , 2009 .

[160]  S. Chang,et al.  Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates , 2009 .

[161]  Zhang Shu-ming,et al.  An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors , 2009 .

[162]  X. Hou,et al.  A Back-Illuminated Vertical-Structure Ultraviolet Photodetector Based on an RF-Sputtered ZnO Film , 2009 .

[163]  Highly efficient photovoltaic diode based organic ultraviolet photodetector and the strong electroluminescence resulting from pure exciplex emission , 2009 .

[164]  Z. Mei,et al.  Visible-blind ultraviolet photodetector based on double heterojunction of n-ZnO/insulator-MgO/p-Si , 2009 .

[165]  Jian Li,et al.  Effects of thermal annealing on the properties of GaN MSM UV photodetectors , 2009 .

[166]  K. Sreenivas,et al.  ZnO based surface acoustic wave ultraviolet photo sensor , 2009 .

[167]  D. Dascalu,et al.  GaN membrane-supported UV photodetectors manufactured using nanolithographic processes , 2009, Microelectron. J..

[168]  D. Shen,et al.  Schottky Barrier Photodetectors Based on Mg0.40Zn0.60O Thin Films , 2009 .

[169]  M. Kalafi,et al.  AlxGa1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures , 2009, Microelectron. J..

[170]  I. Pepe,et al.  A conducting polymer–silicon heterojunction as a new ultraviolet photodetector , 2008 .

[171]  C. Hsiung,et al.  Effect of AlN film thickness on photo/dark currents of MSM UV photodetector , 2008 .

[172]  Leonid Chernyak,et al.  Focused‐ion‐beam fabrication of ZnO nanorod‐based UV photodetector using the in‐situ lift‐out technique , 2008 .

[173]  Masashi Kawasaki,et al.  Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO , 2008 .

[174]  Y. Fang,et al.  A low cost n-SiCN/p-SiCN homojunction for high temperature and high gain ultraviolet detecting applications , 2008 .

[175]  Y. Fang,et al.  GaN UV MSM photodetector on porous β-SiC/(111 )Si substrates , 2008 .

[176]  Chun‐Sing Lee,et al.  High response organic ultraviolet photodetector based on blend of 4,4′,4″-tri-(2-methylphenyl phenylamino) triphenylaine and tris-(8-hydroxyquinoline) gallium , 2008 .

[177]  Y. Koide.  Metal-diamond semiconductor interface and photodiode application , 2008 .

[178]  H. Qi,et al.  High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al(2)O(3)/SiO(2) films , 2008 .

[179]  Chun-Wei Chen,et al.  Near-ultraviolet photodetector based on hybrid polymer/zinc oxide nanorods by low-temperature solution processes , 2008 .

[180]  Y. X. Sun,et al.  Nitride-based photodetectors with unactivated Mg-doped GaN cap layer , 2008 .

[181]  D. Shen,et al.  Ultraviolet Schottky detector based on epitaxial ZnO thin film , 2008 .

[182]  AlxGa1–xN‐based avalanche photodiodes with high reproducible avalanche gain , 2008 .

[183]  Weifeng Yang,et al.  Effects of annealing on the performance of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors , 2008 .

[184]  B. Giordanengo,et al.  193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors , 2008 .

[185]  Ekmel Ozbay,et al.  High-performance visible-blind GaN-based p-i-n photodetectors , 2008 .

[186]  Ruyan Guo,et al.  ZnO microtube ultraviolet detectors , 2008 .

[187]  Sheng-Joue Young,et al.  ZnO-based MIS photodetectors , 2007, Sensors and actuators. A, Physical.

[188]  Ricky W. Chuang,et al.  Gallium nitride metal-semiconductor-metal photodetectors prepared on silicon substrates , 2007 .

[189]  E. Ozbay,et al.  High performance AlxGa1−xN-based avalanche photodiodes , 2007 .

[190]  AlGaN-based high-performance metal–semiconductor–metal photodetectors , 2007 .

[191]  R. Dupuis,et al.  Performance Evaluation of III-Nitride Avalanche Photodiodes Grown on SiC and GaN Substrates , 2007 .

[192]  GaN Schottky barrier photodetectors with SiN∕GaN nucleation layer , 2007 .

[193]  S. Chang,et al.  AlGaN MSM photodetectors with recess-etched LT-AlGaN cap layers , 2007 .

[194]  L. J. Mandalapu,et al.  Ultraviolet photoconductive detectors based on Ga-doped ZnO films grown by molecular-beam epitaxy , 2007 .

[195]  Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors , 2007 .

[196]  Y. Vygranenko,et al.  Optically transparent ZnO-based n–i–p ultraviolet photodetectors , 2007 .

[197]  Hailin Xue,et al.  TiO2 based metal-semiconductor-metal ultraviolet photodetectors , 2007 .

[198]  Yueguang Lu,et al.  Ultraviolet photoconductive detector with high visible rejection and fast photoresponse based on ZnO thin film , 2007 .

[199]  H. Yadav,et al.  Enhanced response from metal/ZnO bilayer ultraviolet photodetector , 2007 .

[200]  S. Chang,et al.  AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates , 2007 .

[201]  Jin Ning,et al.  Vertical PIN ultraviolet photodetectors based on 4H-SiC homoepilayers , 2007 .

[202]  Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors , 2007 .

[203]  Kazuhiro Hane,et al.  Schottky ultraviolet photodiode using a ZnO hydrothermally grown single crystal substrate , 2007 .

[204]  Linjun Wang,et al.  Effect of grain size on the electrical properties of ultraviolet photodetector with ZnO/diamond film structure , 2007 .

[205]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[206]  Ian W. Boyd,et al.  UV detection for excimer lamps using CVD diamond in various gaseous atmospheres , 2007 .

[207]  X. Y. Li,et al.  Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors , 2007 .

[208]  Yan-Kuin Su,et al.  GaN UV photodetector by using transparency antimony-doped tin oxide electrode , 2007 .

[209]  S. Chang,et al.  ZnO ultraviolet photodiodes with Pd contact electrodes , 2007 .

[210]  S. Averine,et al.  Solar Blind MSM-Photodetectors Based on AlxGa1-xN/GaN Heterostructures Grown by MOCVD , 2008, 2006 International Conference on Microwaves, Radar & Wireless Communications.

[211]  Gustaaf Borghs,et al.  ITON Schottky contacts for GaN based UV photodetectors , 2006 .

[212]  X. G. Zheng,et al.  Photoconductive ultraviolet detectors based on ZnO films , 2006 .

[213]  Juan Xie,et al.  Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol–gel method , 2006 .

[214]  E. Ozbay,et al.  Dual-color ultraviolet metal-semiconductor-metal AlGaN photodetectors , 2006 .

[215]  A. Saleh,et al.  Effects of oxide layers and metals on photoelectric and optical properties of Schottky barrier photodetector , 2006 .

[216]  S. Chang,et al.  ZnO metal-semiconductor-metal ultraviolet sensors with various contact electrodes , 2006 .

[217]  Yong‐Hoon Cho,et al.  Fabrication and characterization of Ni-based schottky-type AlxGa1-xN ultraviolet photodetectors with different buffer conditions , 2006 .

[218]  Makoto Ueda,et al.  Dielectrophoretic fabrication and characterization of a ZnO nanowire-based UV photosensor , 2006, Nanotechnology.

[219]  T. Boufaden,et al.  Realisation of 'Solar Blind' AlGaN Photodetectors: Measured and calculated spectral response , 2006, Microelectron. J..

[220]  C. H. Chen,et al.  GaN MSM photodetectors with photo-CVD annealed Ni/Au electrodes , 2006, Microelectron. J..

[221]  S. Chang,et al.  High UV/visible rejection contrast AlGaN/GaN MIS photodetectors , 2006 .

[222]  H. Kasada,et al.  Highly sensitive ultraviolet PIN photodiodes of ZnSSe n+–i–p structure/p+‐GaAs substrate grown by MBE , 2006 .

[223]  C. K. Wang,et al.  Homoepitaxial ZnSe MSM photodetectors with various transparent electrodes , 2006 .

[224]  Theoretical study of top illuminated planar SiC PIN ultraviolet detectors , 2006 .

[225]  Xiaping Chen,et al.  Visible blind p-i-n ultraviolet photodetector fabricated on 4H-SiC , 2006 .

[226]  Yong‐Hoon Cho,et al.  Growth and characteristics of Ni-based Schottky-type AlxGa1−xN ultraviolet photodetectors with AlGaN∕GaN superlattices , 2005 .

[227]  Y. C. Lee,et al.  Dark current characteristics of thermally treated contacts on GaN-based ultraviolet photodetectors , 2005 .

[228]  Pei-Wen Li,et al.  The improvements of GaN p-i-n UV sensor on 1° off-axis sapphire substrate , 2005 .

[229]  Seong-Gyu Im,et al.  Ultraviolet enhanced Si-photodetector using p-NiO films , 2005 .

[230]  O. Ambacher,et al.  Defect related absorption and emission in AlGaN solar-blind UV photodetectors , 2005 .

[231]  S. Chang,et al.  Nitride-based MSM UV photodetectors with photo-chemical annealing Schottky contacts , 2005 .

[232]  Qing Zhang,et al.  Performance improvement of polycrystalline diamond ultraviolet photodetectors by room-temperature plasma treatment , 2005 .

[233]  Synthesis of MgxNi1-xO thin films with a band-gap in the solar-blind region , 2005 .

[234]  S. Forrest,et al.  Controlled growth of a molecular bulk heterojunction photovoltaic cell , 2004 .

[235]  High-performance solar-blind photodetectors based on Al/sub x/Ga/sub 1-x/N heterostructures , 2004, IEEE Journal of Selected Topics in Quantum Electronics.

[236]  Y. D. Jhou,et al.  Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structures , 2004 .

[237]  Cheul‐Ro Lee,et al.  Fabrication of metal–semiconductor–metal (MSM) UV photodetectors with Al0.16Ga0.84N/GaN heterostructures , 2004 .

[238]  Toshimichi Ito,et al.  Highly sensitive UV photodetectors fabricated using high-quality single-crystalline CVD diamond films , 2004 .

[239]  S. Chang,et al.  Nitride-based 2DEG photodetectors with a large AC responsivity , 2003 .

[240]  Theoretical study of characteristics in GaN metal semiconductor metal photodetectors , 2003 .

[241]  H. Morkoç,et al.  GaN/AlGaN back-illuminated multiple-quantum-well Schottky barrier ultraviolet photodetectors , 2003 .

[242]  S.J. Chang,et al.  GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts , 2003, IEEE Electron Device Letters.

[243]  S. Chang,et al.  The characteristics of different transparent electrodes on GaN photodetectors , 2003 .

[244]  E. Monroy,et al.  Wide-bandgap semiconductor ultraviolet photodetectors , 2003 .

[245]  Yan-Kuin Su,et al.  InGaN/GaN MQW p–n junction photodetectors , 2002 .

[246]  Zhong Lin Wang,et al.  Self-Assembled Nanowire−Nanoribbon Junction Arrays of ZnO , 2002 .

[247]  Eva Monroy,et al.  Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection , 2002 .

[248]  K. Kishino,et al.  Resonant-Cavity-Enhanced UV Metal-Semiconductor-Metal (MSM) Photodetectors Based on AlGaN System , 2001 .

[249]  F. D. Auret,et al.  Electrical Characterization of 1.8 MeV Proton-Bombarded ZnO , 2001 .

[250]  E. Muñoz,et al.  Algan photodetectors grown on Si(111) by molecular beam epitaxy , 2001 .

[251]  E. Monroy,et al.  AlGaN-based UV photodetectors , 2001 .

[252]  E. Monroy,et al.  Visible-blind ultraviolet photodetectors based on ZnMgBeSe Schottky barrier diodes , 2001 .

[253]  C. T. Foxon,et al.  Fabrication and characterization of metal-semiconductor-metal (MSM) ultraviolet photodetectors on undoped GaN/sapphire grown by MBE , 2000 .

[254]  Tom Oder,et al.  Photoresponsivity of ultraviolet detectors based on InxAlyGa1−x−yN quaternary alloys , 2000 .

[255]  Z. M. Zhao,et al.  Metal–semiconductor–metal GaN ultraviolet photodetectors on Si(111) , 2000 .

[256]  Shiro Sakai,et al.  Electrical properties of metal/GaN and SiO2/GaN interfaces and effects of thermal annealing , 2000 .

[257]  A. Bouhdada,et al.  Modeling of the spectral response of AlxGa1−xN Schottky ultraviolet photodetectors , 2000 .

[258]  M. Razeghi,et al.  Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates for ultraviolet photodetector applications , 2000 .

[259]  E. Monroy,et al.  Schottky Barrier Ultraviolet Photodetectors on Epitaxial Lateral Overgrown GaN , 1999 .

[260]  Jacques I. Pankove,et al.  Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity , 1999 .

[261]  Manijeh Razeghi,et al.  High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN , 1999 .

[262]  R. Dupuis,et al.  Very high-speed ultraviolet photodetectors fabricated on GaN , 1998, Conference Proceedings. LEOS'98. 11th Annual Meeting. IEEE Lasers and Electro-Optics Society 1998 Annual Meeting (Cat. No.98CH36243).

[263]  Manijeh Razeghi,et al.  AlxGa1−xN (0⩽x⩽1) ultraviolet photodetectors grown on sapphire by metal-organic chemical-vapor deposition , 1997 .

[264]  Manijeh Razeghi,et al.  Semiconductor ultraviolet detectors , 1996, Photonics West.

[265]  Manijeh Razeghi,et al.  AlGaN ultraviolet photoconductors grown on sapphire , 1996 .

[266]  M. Asif Khan,et al.  Visible-blind ultraviolet photodetectors based on GaN p-n junctions , 1995 .

[267]  M. Asif Khan,et al.  Schottky barrier photodetector based on Mg‐doped p‐type GaN films , 1993 .

[268]  Daniel Moses,et al.  Diamond metal-semiconductor-metal ultraviolet photodetectors , 1993 .

[269]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[270]  R. B. Campbell,et al.  Detection of ultraviolet radiation using silicon carbide p-n junctions , 1967 .