Trench shielded gate concept for improved switching performance with the low miller capacitance
暂无分享,去创建一个
Y. Onozawa | M. Sawada | M. Otsuki | K. Ohi | Y. Ikura | Y. Nabetani
[1] T. Laska,et al. The Field Stop IGBT (FS IGBT). A new power device concept with a great improvement potential , 2000, 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094).
[2] Y. Onozawa. Development of the next generation 1200V trench-gate FS-IGBT featuring lower EMI noise and lower switching loss , 2007, Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's.
[3] M. Otsuki,et al. Ultra low miller capacitance trench-gate IGBT with the split gate structure , 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
[4] Y. Onozawa,et al. 600V trench-gate IGBT with Micro-P structure , 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.
[5] Ichiro Omura,et al. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor , 1993, Proceedings of IEEE International Electron Devices Meeting.