论文信息 - Reactive Ion Etching of Al-1%Cu alloy thin films

Reactive Ion Etching of Al-1%Cu alloy thin films

The special technical process was demaned for the reactive ion etching (RIE) of AlCu alloy thin films, such as the removal of doped Cu, the protection of sidewall and the prevention of chlorine corrosion after etching. In this paper, Al-1%Cu alloy was etched using BCl3, Cl2 and N2 gases, and CH4 was also added in the etching gases in order to enhance the sidewall protection. The process was optimized and the multi-step process were abtained. The effect of CH4 on sidewall protection was analyzed. The removal of residue after the etch was also studied.

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