Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters.
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Tien Khee Ng | Boon S Ooi | Nini Wei | Davide Priante | Mohammad Khaled Shakfa | Bilal Janjua | Huafan Zhang | B. Ooi | N. Wei | T. Ng | Daliang Zhang | M. Ebaid | M. Shakfa | B. Janjua | Chao Zhao | A. Alhamoud | D. Priante | Chao Zhao | Daliang Zhang | Mohamed Ebaid | Abdullah A Alhamoud | A. A. Alhamoud | Huafan Zhang
[1] C. Lieber,et al. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices , 2003 .
[2] F. Giannazzo,et al. Critical issues for interfaces to p-type SiC and GaN in power devices , 2012 .
[3] Growth by molecular beam epitaxy and properties of inclined GaN nanowires on Si(001) substrate. , 2014, Nanotechnology.
[4] Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires. , 2016, Nano letters.
[5] Z. Mi,et al. Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light , 2015 .
[6] R. Calarco,et al. Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy , 2011, IEEE Journal of Selected Topics in Quantum Electronics.
[7] Zetian Mi,et al. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers , 2016 .
[8] T. Gotschke,et al. The influence of Mg doping on the nucleation of self-induced GaN nanowires , 2012 .
[9] Aaas News,et al. Book Reviews , 1893, Buffalo Medical and Surgical Journal.
[10] L. Largeau,et al. Facet and in-plane crystallographic orientations of GaN nanowires grown on Si(111) , 2008, Nanotechnology.
[11] Y. Taniyasu,et al. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres , 2006, Nature.
[12] F. Fabregat‐Santiago,et al. Determination of carrier density of ZnO nanowires by electrochemical techniques , 2006 .
[13] H. Ryu,et al. Effects of two-step Mg doping in p-GaN on efficiency characteristics of InGaN blue light-emitting diodes without AlGaN electron-blocking layers , 2013 .
[14] Gerhard Tröster,et al. Flexible a-IGZO Phototransistor for Instantaneous and Cumulative UV-Exposure Monitoring for Skin Health , 2016 .
[15] U. Mishra,et al. Interdigitated Multipixel Arrays for the Fabrication of High-Power Light-Emitting Diodes With Very Low Series Resistances, Reduced Current Crowding, and Improved Heat Sinking , 2007, IEEE Transactions on Electron Devices.
[16] J. Turner,et al. Synthesis of band-gap-reduced p-type ZnO films by Cu incorporation , 2007 .
[17] Mark A. Reed,et al. Electrical characterization of single GaN nanowires , 2005 .
[18] W. Marsden. I and J , 2012 .
[19] Z. Mi,et al. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon. , 2015, Nano letters.
[20] Zetian Mi,et al. High efficiency AlGaN deep ultraviolet light emitting diodes on silicon , 2015, Photonics West - Optoelectronic Materials and Devices.
[21] M. Djavid,et al. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources , 2015, Scientific Reports.
[22] Takayoshi Takano,et al. Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency , 2017 .
[23] M. Tchernycheva,et al. Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering , 2011 .
[24] Tien Khee Ng,et al. Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer , 2017 .
[25] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[26] Zach DeVito,et al. Opt , 2017 .
[27] K. Bertness,et al. GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements , 2009 .
[28] R. Myers,et al. Nanowire LEDs grown directly on flexible metal foil , 2016 .
[29] J. Arbiol,et al. Carrier confinement in GaN/Al x Ga 1-x N nanowire heterostructures (0 , 2011, 1109.3394.
[30] M. Stutzmann,et al. Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy , 2008 .
[31] Chao Shen,et al. Facile Formation of High-Quality InGaN/GaN Quantum-Disks-in-Nanowires on Bulk-Metal Substrates for High-Power Light-Emitters. , 2016, Nano letters.
[32] A. Pofelski,et al. Molecular beam epitaxy growth of Al-rich AlGaN nanowires for deep ultraviolet optoelectronics , 2016 .
[33] Tsuyoshi Murata,et al. {m , 1934, ACML.
[34] Kai Cui,et al. High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy , 2012 .
[35] Y. Sharma,et al. In Situ Temperature Measurement of GaN-Based Ultraviolet Light-Emitting Diodes by Micro-Raman Spectroscopy , 2010 .
[36] E. Monroy,et al. AlGaN/AlN quantum dots for UV light emitters , 2013 .
[37] Z. Mi,et al. Three-Dimensional Quantum Confinement of Charge Carriers in Self-Organized AlGaN Nanowires: A Viable Route to Electrically Injected Deep Ultraviolet Lasers. , 2015, Nano letters.
[38] H. Renevier,et al. Growth, structural and optical properties of AlGaN nanowires in the whole composition range , 2013, Nanotechnology.
[39] Jian Zhang,et al. Lattice‐Symmetry‐Driven Epitaxy of Hierarchical GaN Nanotripods , 2017 .
[40] Z. Mi,et al. On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures , 2017 .
[41] Norihiko Kamata,et al. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes , 2014 .
[42] Haiding Sun,et al. Droop-free AlxGa1-xN/AlyGa1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates. , 2017, Optics express.
[43] Pallab Bhattacharya,et al. An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley-Read-Hall recombination. , 2015, Nanoscale.
[44] P. Vogl,et al. nextnano: General Purpose 3-D Simulations , 2007, IEEE Transactions on Electron Devices.
[45] M. Stutzmann,et al. Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking , 2009, Nanotechnology.
[46] S. Kret,et al. Influence of substrate nitridation temperature on epitaxial alignment of GaN nanowires to Si(111) substrate , 2013, Nanotechnology.
[47] T. Ben,et al. Imaging and Analysis by Transmission Electron Microscopy of the Spontaneous Formation of Al-Rich Shell Structure in AlxGa1-xN/GaN Nanowires , 2012 .
[48] Rami T. Elafandy,et al. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics. , 2016, Nano letters.
[49] B. Gayral,et al. Quantum Dot-Like Behavior of Compositional Fluctuations in AlGaN Nanowires. , 2016, Nano letters.
[50] Z. Mi,et al. Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature. , 2015, Nature nanotechnology.
[51] Un Jeong Kim,et al. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates , 2011 .
[52] Mim Lal Nakarmi,et al. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys , 2005 .
[53] Andrew G. Glen,et al. APPL , 2001 .
[54] Wei Li,et al. Surface Plasmon Enhanced Hot Exciton Emission in Deep UV‐Emitting AlGaN Multiple Quantum Wells , 2014 .
[55] Grigory Simin,et al. High-power deep ultraviolet light-emitting diodes basedon a micro-pixel design , 2004 .
[56] M. Islam,et al. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges , 2017 .
[57] Z. Mi,et al. p-Type dopant incorporation and surface charge properties of catalyst-free GaN nanowires revealed by micro-Raman scattering and X-ray photoelectron spectroscopy. , 2014, Nanoscale.
[58] Lili Sun,et al. Improved performance of UV-LED by p-AlGaN with graded composition , 2011 .
[59] Todd E. Harvey,et al. Controlled Nucleation of GaN Nanowires Grown with Molecular Beam Epitaxy , 2010 .
[60] Ho Won Jang,et al. Incorporation of Oxygen Donors in AlGaN , 2004 .
[61] C. Thomsen,et al. Local vibrational modes in Mg-doped GaN grown by molecular beam epitaxy , 1999 .
[62] P. Bhattacharya,et al. Catalyst-free InGaN/GaN nanowire light emitting diodes grown on (001) silicon by molecular beam epitaxy. , 2010, Nano letters.
[63] Z. Mi,et al. Highly efficient, spectrally pure 340 nm ultraviolet emission from AlxGa1−xN nanowire based light emitting diodes , 2013, Nanotechnology.
[64] Lili Sun,et al. AlGaN-based deep-ultraviolet light-emitting diodes grown on High-quality AlN template using MOVPE , 2015 .
[65] L. Largeau,et al. GaN/AlN free-standing nanowires grown by molecular beam epitaxy , 2008 .
[66] M. G. Kibria,et al. p-Type InN nanowires. , 2013, Nano letters.
[67] Lars Samuelson,et al. Spatially resolved Hall effect measurement in a single semiconductor nanowire. , 2012, Nature nanotechnology.
[68] M. Ramsteiner,et al. p-Type Doping of GaN Nanowires Characterized by Photoelectrochemical Measurements. , 2017, Nano letters.
[69] F. Naranjo,et al. Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy , 2004 .
[70] Debdeep Jena,et al. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.
[71] Hideki Hirayama,et al. Enhanced light extraction in 260 nm light-emitting diode with a highly transparent p-AlGaN layer , 2015 .
[72] C. Thomsen,et al. Local vibrational modes and compensation effects in Mg-doped GaN , 2003 .
[73] Charles M. Lieber,et al. Gallium Nitride Nanowire Nanodevices , 2002 .
[74] Zetian Mi,et al. An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature , 2016 .
[75] Tien Khee Ng,et al. Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy. , 2016, Small.
[76] Siddharth Rajan,et al. Polarization-induced pn diodes in wide-band-gap nanowires with ultraviolet electroluminescence. , 2012, Nano letters.
[77] Zetian Mi,et al. Enhancing the light extraction efficiency of AlGaN deep ultraviolet light emitting diodes by using nanowire structures , 2016 .
[78] Comparison of chemical, electronic, and optical properties of Mg-doped AlGaN , 2016 .
[79] Takashi Ito,et al. Band-Edge Energies and Photoelectrochemical Properties of n-Type Al x Ga1 − x N and In y Ga1 − y N Alloys , 2007 .
[80] H. Morkoç,et al. Luminescence properties of defects in GaN , 2005 .