The 4500 V trench gate IEGT with current sense function

This paper presents the 4500 V trench gate injection enhanced gate transistor (IEGT) with current sense function, for the first time, that realizes high short circuit ability without suffering its excellent trade-off between turn-off switching loss and on-state voltage. A press pack IEGT, containing multiplied 20 IEGT chips, can be controlled by its collector current under short circuit condition.

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