Low-temperature growth of ferroelectric lead zirconate titanate thin films using the magnetic field of low power 2.45 GHz microwave irradiation

Pb(Zr(x)Ti(1-x))O(3) (PZT) thin films were coated on Pt/Ti/SiO(2)/Si substrates by the sol-gel method and then crystallized by using the magnetic field of 2.45 GHz microwave irradiation. The elevated temperature generated by microwave irradiation used to obtain the perovskite phase was only 450 degrees C, which is significantly lower than that of conventional thermal processing. The PZT films crystallized by microwave irradiation showed similar ferroelectric properties to those of the films crystallized by conventional thermal processing at 600 degrees C. It is clear that single-mode 2.45 GHz microwave irradiation in the microwave magnetic field is effective for obtaining perovskite PZT thin films at low temperatures. (c) 2008 American Institute of Physics.

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