10 Gb/s Silicon Bipolar 8:1 Multiplexer And 1:8 Demultiplexer
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High-speed multiplexer and demultiplexer circuits are key components in high-speed optical communication systems such as SONET. As optical communication link speeds increase, faster electronic interface circuitry is required. The use of multiplexer circuits allows most of the electronic circuitry to operate on parallel data at a lower speed, reducing the speed requirements of much of the system. A retimed 8:1 multiplexer and a 1:8 demultiplexer which operate at 10 Gb/s are described. These circuits were fabricated in high-speed silicon bipolar process. Design optimization techniques were used to achieve maximum performance. The retimed multiplexer and the demultiplexer dissipate 3.8 and 4.3 W, respectively. >
[1] Hans-Martin Rein,et al. Static 7 GHz frequency divider IC based on a 2 μm Si bipolar technology , 1987 .
[2] Shoichi Shimizu,et al. TPM 8.4: A lOGHz GaAs 8b MultiplexerlDemultiplexer Chip Set for the SONET STS-192 System , 1991 .
[3] H. Fu,et al. A high-speed bipolar technology featuring self-aligned single-poly base and submicrometer emitter contacts , 1990, IEEE Electron Device Letters.