High-temperature silicon carbide: characterization of state-of-the-art silicon carbide power transistors

For several decades, silicon (Si) has been the primary semiconductor choice for power electronic devices. During this time, the development and fabrication of Si devices has been optimized, which, in combination with the large abundance of material, has resulted in high manufacturing capability and extremely low costs. However, Si is approaching its limits in power conversion [1], [2]; improved efficiency, reduced size, and lower overall system cost can now be achieved by replacing Si devices with wide-bandgap (WBG) semiconductors [1]?[3].

[1]  R. Burgos,et al.  High-temperature characterization and comparison of 1.2 kV SiC power MOSFETs , 2013, 2013 IEEE Energy Conversion Congress and Exposition.

[2]  J. Gafford,et al.  Comparative analysis of commercially available silicon carbide transistors , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[3]  V. Parihar,et al.  Enhanced current gain in SiC power BJTs using surface accumulation layer transistor (SALTran) concept , 2004, 2004 IEEE Region 10 Conference TENCON 2004..

[4]  Dushan Boroyevich,et al.  Characterization and comparison of 1.2 kV SiC power semiconductor devices , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).

[5]  R. Singh,et al.  Commercial impact of silicon carbide , 2008, IEEE Industrial Electronics Magazine.

[6]  Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept , 2005 .

[7]  J. B. Casady,et al.  Advances in SiC VJFETs for renewable and high-efficiency power electronics applications , 2010, The 2010 International Power Electronics Conference - ECCE ASIA -.

[8]  R. Burgos,et al.  Design considerations of a fast 0-Ω gate-drive circuit for 1.2 kV SiC JFET devices in phase-leg configuration , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[9]  J.H. Zhao,et al.  Development of 4H-SiC LJFET-Based Power IC , 2008, IEEE Transactions on Electron Devices.

[10]  Honggang Sheng,et al.  Investigation of 1.2 kV SiC MOSFET for high frequency high power applications , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[11]  Fabian Denk,et al.  Characterization and comparison of commercially available silicon carbide (SIC) power switches , 2012 .

[12]  Ralf Siemieniec,et al.  The 1200V direct-driven SiC JFET power switch , 2011, Proceedings of the 2011 14th European Conference on Power Electronics and Applications.

[13]  SiC Power Devices and Modules , 2013 .

[14]  Jonathan Young,et al.  Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications , 2014 .

[15]  J. Kolar,et al.  Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs , 2010, IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society.

[16]  R. Singh,et al.  1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications , 2012, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[17]  John S. Glaser,et al.  Recent advances in silicon carbide MOSFET power devices , 2010, 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[18]  Hector Sarnago,et al.  Improved Operation of SiC–BJT-Based Series Resonant Inverter With Optimized Base Drive , 2014, IEEE Transactions on Power Electronics.

[19]  Philippe Godignon,et al.  A Survey of Wide Bandgap Power Semiconductor Devices , 2014, IEEE Transactions on Power Electronics.

[20]  J. Rabkowski,et al.  Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated , 2012, IEEE Industrial Electronics Magazine.

[21]  T. Friedli,et al.  Towards a 99% efficient three-phase buck-type PFC rectifier for 400 V DC distribution systems , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[22]  Mietek Bakowski,et al.  Design, process, and performance of all‐epitaxial normally‐off SiC JFETs , 2009 .

[23]  Andrei Blinov,et al.  Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applications , 2013, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society.

[24]  A. Agarwal,et al.  Performance comparison of 1200V Silicon and SiC devices for UPS application , 2010, IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society.

[25]  J. Glaser,et al.  Direct comparison of silicon and silicon carbide power transistors in high-frequency hard-switched applications , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[26]  Dongyuan Zhao,et al.  A Discussion of SiC Prospects in Next Electrical Grid , 2012, 2012 Asia-Pacific Power and Energy Engineering Conference.

[27]  R. K. Malhan,et al.  Normally-off Trench JFET Technology in Silicon Carbide (特集 電子デバイス) , 2005 .

[28]  Bulent Sarlioglu,et al.  Analysis of a SiC three-phase voltage source inverter under various current and power factor operations , 2013, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society.

[29]  Anant K. Agarwal,et al.  A Comparison of High Temperature Performance of SiC DMOSFETs and JFETs , 2006 .

[30]  Rolando Burgos,et al.  Review of Solid-State Transformer Technologies and Their Application in Power Distribution Systems , 2013, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[31]  Wei Liu.  Electro-thermal simulations and measurements of silicon carbide power transistors , 2004 .

[32]  Pedro Rodriguez,et al.  Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules , 2013, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society.

[33]  Dushan Boroyevich,et al.  A High-Power-Density Converter , 2010, IEEE Industrial Electronics Magazine.

[34]  R. Ghandi,et al.  Modeling and Characterization of Current Gain Versus Temperature in 4H-SiC Power BJTs , 2010, IEEE Transactions on Electron Devices.

[35]  Hans-Peter Nee,et al.  Challenges Regarding Parallel Connection of SiC JFETs , 2013 .

[36]  Bruno Allard,et al.  A 200 °C Safety System at Power-Up of Normally On SiC JFETs Inverters , 2014, IEEE Transactions on Power Electronics.

[37]  L. Tolbert,et al.  Investigation on the parallel operation of discrete SiC BJTs and JFETs , 2011, 2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).

[38]  A. Agarwal,et al.  Comparisons of SiC MOSFET and Si IGBT Based Motor Drive Systems , 2007, 2007 IEEE Industry Applications Annual Meeting.

[39]  J. Kolar,et al.  A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter , 2005, Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference, 2005..

[40]  Zheng Chen.  Characterization and Modeling of High-Switching-Speed Behavior of SiC Active Devices , 2009 .

[41]  J. Rabkowski,et al.  Low-Loss High-Performance Base-Drive Unit for SiC BJTs , 2012, IEEE Transactions on Power Electronics.

[42]  D. Boroyevich,et al.  Performance evaluation of SiC power MOSFETs for high-temperature applications , 2012, 2012 15th International Power Electronics and Motion Control Conference (EPE/PEMC).

[43]  L. Tolbert,et al.  Effects of silicon carbide (SiC) power devices on HEV PWM inverter losses , 2001, IECON'01. 27th Annual Conference of the IEEE Industrial Electronics Society (Cat. No.37243).

[44]  Pericle Zanchetta,et al.  Performance evaluation of high-voltage 1.2 kV silicon carbide metal oxide semi-conductor field effect transistors for three-phase buck-type PWM rectifiers in aircraft applications , 2012 .

[45]  R. Burgos,et al.  Characterization and modeling of 1.2 kv, 20 A SiC MOSFETs , 2009, 2009 IEEE Energy Conversion Congress and Exposition.

[46]  J. Suehle,et al.  Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments , 2010, IEEE Transactions on Device and Materials Reliability.

[47]  Umesh K. Mishra,et al.  Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure , 2013, IEEE Transactions on Electron Devices.

[48]  Maurice Weiner,et al.  On the temperature coefficient of 4H-SiC BJT current gain , 2003 .

[49]  Axel Mertens,et al.  Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices , 2014, IEEE Transactions on Power Electronics.

[50]  V. Bondarenko,et al.  Normally-Off SiC VJFETs for 800 V and 1200 V Power Switching Applications , 2008, 2008 20th International Symposium on Power Semiconductor Devices and IC's.

[51]  Qingchun Zhang,et al.  Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT , 2008, IEEE Transactions on Electron Devices.

[52]  B. Jayant Baliga,et al.  Fundamentals of Power Semiconductor Devices , 2008 .

[53]  M. Pecht,et al.  Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices , 2008 .

[54]  Stephen E. Saddow,et al.  Advances in silicon carbide processing and applications , 2004 .

[55]  High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices , 2013 .

[56]  Hyung-Seok Lee,et al.  Analysis of the base current and saturation voltage in 4H-SiC power BJTs , 2007, 2007 European Conference on Power Electronics and Applications.

[57]  Patrick R. Palmer,et al.  A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors , 2013, 2013 IEEE ECCE Asia Downunder.