75 GHz 80 mW InP DHBT power amplifier

We report a 75 GHz MMIC power amplifier in InP/InGaAs/InP DHBT transferred-substrate technology. The amplifier has 256 /spl mu/m/sup 2/ total emitter area and exhibits a power gain of 5.5 dB at 75 GHz and a saturated output power of 19 dBm (80mW) under 1-dB gain compression. The DHBT employed by the amplifier has a lightly doped InP emitter epitaxial layer between the emitter and the emitter cap layer as a distributed ballast resistance to improve thermal stability. To our knowledge, this is the highest reported output power for a W-band HBT power amplifier.

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