An Ultra Wideband Low Noise Amplifier in 0.18μm RF CMOS Technology

This paper presents a broadband two-stage low noise amplifier(LNA) operating from 3 to 10 GHz, designed with 0.18 μm RF CMOS technology. The cascode feedback topology and broadband matching technique are used to achieve broadband performance and input/output matching characteristics. The proposed UWB LNA results in the low noise figure(NF) of 3.4 dB, input/output return loss(S₁₁/S₂₂) of lower than ―10 dB, and power gain of 14.5 dB with gain flatness of ±1 dB within the required bandwidth. The input-referred third-order intercept point(IIP₃) and the input-referred 1-dB compression point(P_(1dB)) are ―7 dBm and ―17 dBm, respectively.