论文信息 - Growth of In-Plane Ge1–xSnx Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism - 字舞流文

Growth of In-Plane Ge1–xSnx Nanowires with 22 at. % Sn Using a Solid–Liquid–Solid Mechanism

S. Moldovan | Wanghua Chen | P. Roca i Cabarrocas | P. Pareige | S. Duguay | E. Azrak | Shiwen Gao