High-speed InP/GaInAs photodiode on sapphire substrate

Using epitaxial lift-off by selective wet-chemical etching, we have transferred an InP/GalnAs photodiode onto a sapphire substrate. The transferred diode shows an estimated 13.5 GHz bandwidth and 90% internal quantum efficiency. Our technique has promising applications in highperformance optoelectronic circuits for fibre-optic communications systems combining device from different material systems.