AlGaAs/GaAs lens-shaped LED with high efficiency and narrow field pattern

The new LED structure suitable for high power and narrow beam pattern is proposed composed of microlens and LED layer. The microlens is fabricated by the meltback etching and regrowth technique in LPE. To control the shape of microlens, meltback etching and regrowth technique is studied and nearly ideal hemisphere is obtained. The characteristics of the proposed LED structure is calculated based upon ray-tracing method. And the fabricated result is discussed.