Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films
暂无分享,去创建一个
[1] Y. Kobayashi,et al. Preparation and properties of III‐V nitride thin films , 1989 .
[2] Yuichi Sato,et al. Growth of InN on GaAs Substrates by the Reactive Evaporation Method , 1989 .
[3] A. Wakahara,et al. Heteroepitaxial growth of InN by microwave‐excited metalorganic vapor phase epitaxy , 1989 .
[4] R. R. Parsons,et al. Optical properties and microstructure of reactively sputtered indium nitride thin films , 1988 .
[5] C. Foley,et al. Electron mobility in indium nitride , 1984 .
[6] S. Yoshida,et al. Epitaxial growth of GaN/AlN heterostructures , 1983 .
[7] P. Taras,et al. Differences between microwave and RF activation of nitrogen for the PECVD process , 1982 .
[8] Yotaro Murakami,et al. Preparation and optical properties of Ga1−xInxN thin films , 1975 .
[9] K. Rose,et al. Some properties of inn films prepared by reactive evaporation , 1974 .
[10] H. Hovel,et al. Electrical and Optical Properties of rf‐Sputtered GaN and InN , 1972 .
[11] P. Bridenbaugh,et al. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures , 1970 .
[12] G. B. Kistiakowsky,et al. Abstract: Mass Spectrometric Study of the Kinetics of Nitrogen Afterglow , 1956 .