Noise in sub-micron CMOS image sensors

CMOS image sensors are devices that convert illumination signals (light intensity) into electronic signals. The goal of this thesis has been to analyze dominate noise sources in CMOS imagers and to improve the image quality by reducing the noise generated in the CMOS image sensor pixels.

[1]  S. Terakawa,et al.  Analysis of charge-priming transfer efficiency in CPD image sensors , 1984, IEEE Transactions on Electron Devices.

[2]  M.F. Snoeij,et al.  A CMOS Imager With Column-Level ADC Using Dynamic Column Fixed-Pattern Noise Reduction , 2006, IEEE Journal of Solid-State Circuits.

[3]  G. Strull,et al.  A monolithic mosaic of photon sensors for solid-state imaging applications , 1966 .

[4]  H. Mikoshiba,et al.  1/f noise in n-channel silicon-gate MOS transistors , 1982, IEEE Transactions on Electron Devices.

[5]  A. Bravaix,et al.  Hot-carriers , 1999, 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460).

[6]  S.G. Chamberlain,et al.  A novel wide dynamic range silicon photodetector and linear imaging array , 1984, IEEE Journal of Solid-State Circuits.

[7]  John Canfield,et al.  Low-noise readout using active reset for CMOS APS , 2000, Electronic Imaging.

[8]  Ralf Widenhorn,et al.  Infrared response of charge-coupled devices , 2005, IS&T/SPIE Electronic Imaging.

[9]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[10]  G. E. Smith,et al.  Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..

[11]  B. Pain,et al.  Reset noise suppression in two-dimensional CMOS photodiode pixels through column-based feedback-reset , 2002, Digest. International Electron Devices Meeting,.

[12]  A. Theuwissen,et al.  Random Telegraph Signal in CMOS Image Sensor Pixels , 2006, 2006 International Electron Devices Meeting.

[13]  P.K. Ko,et al.  Random telegraph noise of deep-submicrometer MOSFETs , 1990, IEEE Electron Device Letters.

[14]  A.J.P. Theuwissen.  Influence of Terrestrial Cosmic Rays on the Reliability of CCD Image Sensors—Part 2: Experiments at Elevated Temperature , 2008, IEEE Transactions on Electron Devices.

[15]  A. Theuwissen,et al.  Fixed-Pattern Noise Induced by Transmission Gate in Pinned 4T CMOS Image Sensor Pixels , 2006, 2006 European Solid-State Device Research Conference.

[16]  Eric R. Fossum,et al.  128 x 128 CMOS photodiode-type active pixel sensor with on-chip timing, control, and signal chain electronics , 1995, Electronic Imaging.

[17]  A. Kotabe,et al.  Anomalously Large Threshold Voltage Fluctuation by Complex Random Telegraph Signal in Floating Gate Flash Memory , 2006, 2006 International Electron Devices Meeting.

[18]  S. R. Morrison.  A new type of photosensitive junction device , 1963 .

[19]  S. Tedja,et al.  Noise spectral density measurements of a radiation hardened CMOS process in the weak and moderate inversion , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[20]  A. Theuwissen,et al.  The Hole Role in Solid-State Imagers , 2006, IEEE Transactions on Electron Devices.

[21]  H.-S. Wong.  Experimental verification of the mechanism of hot-carrier-induced photon emission in n-MOSFETs using an overlapping CCD gate structure , 1992, IEEE Electron Device Letters.

[22]  M. Schulz,et al.  Single-electron trapping at semiconductor interfaces , 1996 .

[23]  A. Abidi,et al.  Flicker noise in CMOS transistors from subthreshold to strong inversion at various temperatures , 1994 .

[24]  P. Noble,et al.  Self-scanned silicon image detector arrays , 1968 .

[25]  S. Shimada,et al.  MOS area sensor: Part II—Low-noise MOS area sensor with antiblooming photodiodes , 1980, IEEE Transactions on Electron Devices.

[26]  Xinyang Wang,et al.  A CMOS Image Sensor with row and column profiling means , 2008, 2008 IEEE Sensors.

[27]  Hon-Sum Philip Wong,et al.  Technology and device scaling considerations for CMOS imagers , 1996 .

[28]  R. J. Strain,et al.  B.S.T.J. brief: The buried channel charge coupled device , 1972 .

[29]  F. Hooge.  1/ƒ noise is no surface effect , 1969 .

[30]  Albert J. P. Theuwissen,et al.  A CMOS Image Sensor with a Buried-Channel Source Follower , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[31]  Albert J. P. Theuwissen,et al.  Active pixel sensors: the sensor of choice for future space applications? , 2007, SPIE Remote Sensing.

[32]  H. Dym,et al.  The scanistor—A solid-state image scanner , 1964 .

[33]  Abbas El Gamal,et al.  Analysis of temporal noise in CMOS photodiode active pixel sensor , 2001, IEEE J. Solid State Circuits.

[34]  Guang Yang,et al.  An enhanced-performance CMOS imager with a flushed-reset photodiode pixel , 2003 .

[35]  Sunetra K. Mendis,et al.  CMOS active pixel image sensor , 1994 .

[36]  E. Fossum,et al.  CMOS active pixel image sensors for highly integrated imaging systems , 1997, IEEE J. Solid State Circuits.

[37]  Takayoshi Yamada,et al.  A 140dB-Dynamic-Range MOS Image Sensor with In-Pixel Multiple-Exposure Synthesis , 2008, 2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

[38]  K. Arai,et al.  No image lag photodiode structure in the interline CCD image sensor , 1982, 1982 International Electron Devices Meeting.

[39]  A. Blanksby,et al.  Performance analysis of a color CMOS photogate image sensor , 2000 .

[40]  L.K.J. Vandamme.  1/f and RTS Noise in MOSFETs the Faster, the Noisier , 2004 .

[41]  M. J. Kirton,et al.  Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise , 1989 .

[42]  G. Agranov,et al.  Optical-electrical Characteristics of Small, Sub-4μm and Sub-3μm Pixels for Modern CMOS Image Sensors , 2005 .

[43]  A. Theuwissen,et al.  Leakage current modeling of test structures for characterization of dark current in CMOS image sensors , 2003 .

[44]  K. Miyata,et al.  A 250000-pixel image sensor with FET amplification at each pixel for high-speed television cameras , 1990, 1990 37th IEEE International Conference on Solid-State Circuits.