None volatile memory device and programming method and erasing method thereof

The non-volatile memory device of the present invention, the state storage unit for storing and comparing unit for comparing the magnitude of the voltage and the reference voltage output from the particular node in the sample memory cell string, the status information of the memory cell in response to the comparison of the comparison unit results and, it characterized in that it comprises a high voltage generator for changing the start of the program voltage in response to the data stored in the status storing unit. And also comparing the program method of the nonvolatile memory device of the present invention, each of the output voltage and the reference voltage output from the specific node of the stage and a sample memory cell that performs a program operation according to the starting voltage a predetermined program, the output voltages are greater than the respective output voltage to the reference voltage each time it reaches the steps and, a predetermined program / erase count that to the program voltage until greater both than the reference voltage is increased by the step voltage repeated performing a program operation and all steps of storing state information indicating that a large, characterized by including the step of changing the level of the start of the program voltage in accordance with said stored state information. Program / erase times, starting voltage