An analysis of temperature dependent photoluminescence line shapes in InGaN

Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins.

[1]  I. Buyanova,et al.  Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects , 1997 .

[2]  Petr G. Eliseev,et al.  BLUE TEMPERATURE-INDUCED SHIFT AND BAND-TAIL EMISSION IN INGAN-BASED LIGHT SOURCES , 1997 .

[3]  Petr G. Eliseev,et al.  Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells , 1997 .

[4]  Shuji Nakamura,et al.  Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .

[5]  K. Uchida,et al.  A Study of Band Alignment in GaAs/GaInP(Partially Ordered) Heterostructures with High Pressure , 1997 .

[6]  Z. Feng,et al.  Optical transitions in InxGa1−xN alloys grown by metalorganic chemical vapor deposition , 1996 .

[7]  Guangde Chen,et al.  Time-resolved photoluminescence studies of InGaN epilayers , 1996 .

[8]  P. Kiesel,et al.  POLARIZATION EFFECT IN LIGHT EMITTING DIODES WITH ORDERED GAINP ACTIVE LAYERS , 1996 .

[9]  M. Scheffler,et al.  Proceedings of the 23rd International Conference on THE PHYSICS OF SEMICONDUCTORS , 1996 .

[10]  F. Scholz,et al.  Ordering in GaInP2 studied by optical spectroscopy , 1996 .

[11]  T. Glynn,et al.  Temperature dependence of the photoluminescence intensity of ordered and disordered In0.48Ga0.52P , 1994 .

[12]  K. Uchida,et al.  Pressure-induced Γ-X crossover in the conduction band of ordered and disordered GaInP alloys , 1994 .

[13]  Iijima,et al.  Observation of strong ordering in GaxIn , 1988, Physical review letters.