PVT-and-aging adaptive wordline boosting for 8T SRAM power reduction

8T SRAM cell (Fig. 19.6.1) is commonly used in single-VCC microprocessor core for its performance critical low-level caches and multi-ported register-file arrays [1]. 8T cell offers fast read (RD) and write (WR), dual-port capability, and generally lower minimum Vcc (or VMIN) than the 6T cell. By using a decoupled single-ended RD port with domino-style hierarchical RD bit-line, 8T cell features fast RD evaluation path without causing access disturbance that limits RD VMIN in the 6T cell. Using the 8T cell in a half-select-free architecture eliminates pseudo-reads during partial writes, hence enabling WR VMIN optimization independent of RD.