AlGaAs/GaAs Triple Quantum Well Photodetector at $5~\mu \text{m}$ Wavelength—A Simulation Study

A novel AlGaAs/GaAs triple quantum well (QW) photodetector at 5-μm wavelength has been proposed. The photodetector is designed with a double-resonance condition to achieve short tunneling time and large electron escape probability. The interface optical phonon modes and the phonon-assisted electron transition rates have been calculated. The electron escape probability is as high as 0.8 in the proposed photodetector, which is over two times higher than traditional phonon-assisted tunneling devices. Compared with QW infrared photodetectors, the noise current of the photodetector can be reduced dramatically (>1013 times at 77 K and >4000 times at 300 K). In addition, the effects of delta doping on the absorption coefficients and scattering times of the triple QW photodetector are also investigated in detail. Delta doping at the middle of the well is much more desirable than uniform doping, in order to achieve large escape probability and high absorption coefficient.

[1]  O. Richardson.  Thermionic phenomena and the laws which govern them , 2018 .

[2]  M. Stroscio,et al.  Phononic properties for enhanced signal-to-noise photodetector , 2015, 2015 International Workshop on Computational Electronics (IWCE).

[3]  Jun-jie Shi,et al.  Interface optical phonon-assisted scattering rates in wurtzite nitride step quantum wells with strong built-in electric field , 2015 .

[4]  Junxia Shi,et al.  Influence of delta doping on intersubband transition and absorption in AlGaN/GaN step quantum wells for terahertz applications , 2015 .

[5]  M. Ibanescu,et al.  Quantum cascade detector utilizing the diagonal-transition scheme for high quality cavities. , 2015, Optics express.

[6]  M. Stroscio,et al.  Enhanced signal-to-noise in photodetectors due to interface phonon-assisted transitions , 2014, 2014 International Workshop on Computational Electronics (IWCE).

[7]  Cory Hill,et al.  Quantum Well Infrared Photodetector Technology and Applications , 2014, IEEE Journal of Selected Topics in Quantum Electronics.

[8]  A. K. Panda,et al.  Enhancement of electron mobility in asymmetric coupled quantum well structures , 2014 .

[9]  Liang Tang,et al.  Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities , 2013 .

[10]  Y. Cheng,et al.  Effect of delta doping on mid-infrared intersubband absorption in AlGaN/GaN step quantum well structures , 2013 .

[11]  Ning Li,et al.  19 μm quantum cascade infrared photodetectors , 2013 .

[12]  A. K. Panda,et al.  Enhancement of multisubband electron mobility in parabolic AlxGa1−xAs-GaAs double quantum well structures , 2013 .

[13]  A. Ouerghi,et al.  Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures , 2012 .

[14]  K. K. Choi,et al.  Quantum-Well Infrared Photodetectors and Arrays , 2011 .

[15]  F. Julien,et al.  Effect of doping on the mid-infrared intersubband absorption in GaN/AlGaN superlattices grown on Si(111) templates , 2010 .

[16]  P. Lugli,et al.  Importance of Coulomb interactions in bound-to-continuum THz quantum cascade lasers , 2009 .

[17]  K. Kohler,et al.  Quantum Cascade Detectors , 2009, IEEE Journal of Quantum Electronics.

[18]  M. Giovannini,et al.  Time-Resolved Investigations of Electronic Transport Dynamics in Quantum Cascade Lasers Based on Diagonal Lasing Transition , 2009, IEEE Journal of Quantum Electronics.

[19]  P. Vogl,et al.  nextnano: General Purpose 3-D Simulations , 2007, IEEE Transactions on Electron Devices.

[20]  J. Faist,et al.  InP-based quantum cascade detectors in the mid-infrared , 2006 .

[21]  I. Sokmen,et al.  A new approach to quantum well infrared photodetectors: Staircase-like quantum well and barriers , 2006 .

[22]  V. Berger,et al.  High resistance narrow band quantum cascade photodetectors , 2005 .

[23]  Francois H. Julien,et al.  Intersubband spectroscopy of doped and undoped GaN/AlN quantum wells grown by molecular-beam epitaxy , 2003 .

[24]  Antoni Rogalski,et al.  Quantum well photoconductors in infrared detector technology , 2003 .

[25]  Mattias Beck,et al.  Quantum-cascade-laser structures as photodetectors , 2002 .

[26]  K. Lau,et al.  Intersubband absorption characteristics in OMVPE grown delta-doped GaAs/AlGAs multiple quantum well structures , 2000 .

[27]  M. Tidrow,et al.  Quantum Well Infrared Photodetectors , 2000 .

[28]  P. Harrison,et al.  Quantum wells, wires, and dots , 2000 .

[29]  M. Kisin,et al.  Phonon enhanced inverse population in asymmetric double quantum wells , 1999 .

[30]  S. M. Komirenko,et al.  Dispersion of polar optical phonons in wurtzite quantum wells , 1999 .

[31]  M. Stroscio,et al.  Phonon assisted intersubband transitions in step quantum well structures , 1998 .

[32]  H. Sakaki,et al.  Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration , 1998 .

[33]  S. Pan,et al.  Polar optical oscillations in coupled quantum wells: The electron‐phonon interaction and scattering , 1996 .

[34]  Karl Woodbridge,et al.  Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative study , 1991 .

[35]  Kwong-Kit Choi,et al.  New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices , 1987 .