Design and Fabrication of a High Temperature (250 °C Baseplate), High Power Density Silicon Carbide (SiC) Multichip Power Module (MCPM) Inverter
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A. Lostetter | J. Hornberger | R. Schupbach | B. McPherson | E. Cilio | A. Lostetter | R. Schupbach | J. Hornberger | B. Mcpherson | E. Cilio
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[2] A. Lostetter,et al. Evaluation of gold and aluminum wire bond performance for high temperature (500 /spl deg/C) silicon carbide (SiC) power modules , 2005, Proceedings Electronic Components and Technology, 2005. ECTC '05..