InP DHBT IC Technology with Implanted Collector Pedestal and Electroplated Device Contacts
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Z. Griffith | M. Urteaga | N. Parthasarathy | R. Pierson | P. Rowell | K. Shinohara | M. Urteaga | M. Rodwell | R. Pierson | B. Brar | K. Shinohara | Z. Griffith | P. Rowell | N. Parthasarathy | B. Brar | M. Rodwell
[1] Mark J. W. Rodwell,et al. Submicron scaling of HBTs , 2001 .
[2] J. Fastenau,et al. Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process , 2006, IEEE Electron Device Letters.
[3] H. Kroemer,et al. Heterostructure bipolar transistors and integrated circuits , 1982, Proceedings of the IEEE.
[4] M. Reddy,et al. Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/ , 1995, IEEE Electron Device Letters.
[5] J. Sweder,et al. Laterally etched undercut (LEU) technique to reduce base-collector capacitances in heterojunction bipolar transistors , 1995, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 17th Annual Technical Digest 1995.
[6] Z. Griffith,et al. Transistor and circuit design for 100-200-GHz ICs , 2005, IEEE Journal of Solid-State Circuits.
[7] M. Urteaga,et al. Deep submicron InP DHBT technology with electroplated emitter and base contacts , 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..
[8] J.A.M. Geelen,et al. An improved de-embedding technique for on-wafer high-frequency characterization , 1991, Proceedings of the 1991 Bipolar Circuits and Technology Meeting.
[9] M. Sokolich,et al. A submicrometer 252 GHz f/sub T/ and 283 GHz f/sub MAX/ InP DHBT with reduced C/sub BC/ using selectively implanted buried subcollector (SIBS) , 2005, IEEE Electron Device Letters.
[10] Tak H. Ning,et al. History and future perspective of the modern silicon bipolar transistor , 2001 .
[11] J. Fastenau,et al. Wideband DHBTs using a graded carbon-doped InGaAs base , 2003, IEEE Electron Device Letters.