Advancement in Charge-Trap Flash memory technology

Charge-trap Flash memory has been successfully productized in high volume for several technology generations. Two-bits-per-cell MirrorBit® charge-trap technology has been the industry benchmark for NOR Flash for more than a decade, spanning six generations of scaling. More recently Heterogeneous Charge Trap (HCT)™ NAND Flash as well as embedded Charge Trap (eCT)™ NOR Flash have been developed. The planar cell structures will enable continued scaling of these charge-trap technologies, while new architectures such as 3D charge-trap Flash will emerge and further extend the density-growth trend.