An X-Ku Band Distributed GaN LNA MMIC with High Gain

A high-gain wideband low noise amplifier (LNA) using 0.25-㎛ Gallium-Nitride (GaN) MMIC technology is presented. The LNA shows 8 ㎓ to 15 ㎓ operation by a distributed amplifier architecture and high gain with an additional common source amplifier as a mid-stage. The measurement results show a flat gain of 25.1±0.8 ㏈ and input and output matching of -12 ㏈ for all targeted frequencies. The measured minimum noise figure is 2.8 ㏈ at 12.6 ㎓ and below 3.6 ㏈ across all frequencies. It consumes 98 ㎃ with a 10-V supply. By adjusting the gate voltage of the mid-stage common source amplifier, the overall gain is controlled stably from 13 ㏈ to 24 ㏈ with no significant variations of the input and output matching.

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