论文信息 - Electrical properties of the layered single crystals TlGaSe2 and TlInS2

Electrical properties of the layered single crystals TlGaSe2 and TlInS2

In the doped crystals TlGaSe2 and TlInS2, using method of temperature dependencies of DC resistance in the temperature range of 100 - 300 K, the phase transitions at the temperatures of 240 - 245 K and 105 - 120 K were observed. The AC conductance measurements at room temperature indicated the hopping mechanism of carrier transport in the studied samples. Streszczenie. W domieszkowanych krysztalach TlGaSe2 i TlInS2 dla temperaturowych zaleznościach rezystancji z przedzialu 100 - 300 K zmierzonej przy uzyciu prądu stalego zaobserwowano przejścia fazowe w przedzialach temperatur 240 - 245 K i 105 - 120 K. Pomiary konduktywności przy uzyciu prądu przemiennego w temperaturze pokojowej wskazaly skokowy mechanizm przenoszenia ladunkow w badanych probkach. (Wlaściwości elektryczne monokrysztalow TlGaSe2 and TlInS2).

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