1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability

A novel 1.7kV IGBT with deep floating-p layers separated from trench gates has been developed to realize low loss, low EMI noise, and high reliability. Separating floating-p layers from the trench gates reduces excess V<inf>GE</inf> overshoot, which results in a 51% smaller reverse recovery dV<inf>AK</inf>/dt than the conventional IGBT. The deep floating p-layers weaken the electric field under the trenches, which results in an avalanche breakdown voltage of 2250V. In addition, the E<inf>on</inf> + E<inf>off</inf> for the proposed structure can be reduced by 47% more than that of the conventional one, maintaining a low V<inf>CE(sat)</inf> of 2.3V at 125°C.

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